Population dynamics of excitons in silicon nanocrystals structures under strong optical excitation

O.A. Shalygina, D.M. Zhigunov, D.A. Palenov, V.Yu Timoshenko, P.K. Kashkarov, M. Zacharias, P.M. Koenraad

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We report on the experimental and theoretical studies of population/depopulation dynamics of excitons in the structures with Si nanocrystals in SiO2 matrix (nc-Si/SiO2) under strong optical excitation. The experimental results are explained using a phenomenological model based on rate equations for coupled system of energy donors (excitons) and energy acceptors (erbium ions). Exciton luminescence is found to exhibit superlinear dependence for Er-doped samples. At the same time the Er-related luminescence at 1.5 µm shows a saturation of the intensity and shortening of the lifetime, which are attributed to the population inversion of the Er ions states. The obtained results demonstrate that nc-Si/SiO2:Er systems can be used for applications in Si-based optical amplifiers and lasers, compatible with planar Si-technology.
Original languageEnglish
Title of host publicationInternational Conference on Materials for Advanced Technologies, ICMAT 2007
Pages196-198
DOIs
Publication statusPublished - 2008

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Fingerprint

Dive into the research topics of 'Population dynamics of excitons in silicon nanocrystals structures under strong optical excitation'. Together they form a unique fingerprint.

Cite this