We propose a band model for layered III-V semiconductors, by reconfiguring the conven-tional band structure according to the polarization properties of the optical transitions of the carriers. This band model enables to conveniently investigate the light cross phase modulation and cross gain modulation with different polarizations in semiconductor op-tical amplifiers. It also provides a simple tool to study related ultrafast processes in terms of the carrier dynamics in polarization characterized bands, interacting with the corre-sponding TE or TM polarized optical fields. corresponding polarized optical field.
|Title of host publication||Proceedings Symposium IEEE/LEOS Benelux Chapter, 2004, Ghent|
|Place of Publication||Gent|
|Publisher||Institute of Electrical and Electronics Engineers|
|Publication status||Published - 2004|