Polarization anisotropy in self-assembled quantum dots within transient absorption bleaching

E.W. Bogaart; J.E.M. Haverkort; T.J. Eijkemans; T. Mano; R. Nötzel; J.H. Wolter

Polarization anisotropy in self-assembled quantum dots within transient absorption bleaching

E.W. Bogaart, J.E.M. Haverkort, T.J. Eijkemans, T. Mano, R. Nötzel, J.H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Excitation dependent optical anisotropy in InAs/GaAs quantum dots is studied by means of timeresolved differential reflection spectroscopy, probing the linear polarization eigenstates. The measured dependence of the bleaching is due to linear dichroism. A dichroism of 1.3 is observed, which is determined by strain.

Original language	English
Title of host publication	Proc. 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics
Pages	682-685
Publication status	Published - 2004
Event	conference; 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics - Duration: 1 Jan 2004 → …

Conference

Conference	conference; 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics
Period	1/01/04 → …
Other	7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics

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@inproceedings{09c6e705b619492f8dc71c2bd1686ea8,

title = "Polarization anisotropy in self-assembled quantum dots within transient absorption bleaching",

abstract = "Excitation dependent optical anisotropy in InAs/GaAs quantum dots is studied by means of timeresolved differential reflection spectroscopy, probing the linear polarization eigenstates. The measured dependence of the bleaching is due to linear dichroism. A dichroism of 1.3 is observed, which is determined by strain.",

author = "E.W. Bogaart and J.E.M. Haverkort and T.J. Eijkemans and T. Mano and R. N{\"o}tzel and J.H. Wolter",

year = "2004",

language = "English",

isbn = "90-73461-43-X",

pages = "682--685",

booktitle = "Proc. 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics",

note = "conference; 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics ; Conference date: 01-01-2004",

}

Bogaart, EW, Haverkort, JEM, Eijkemans, TJ, Mano, T, Nötzel, R & Wolter, JH 2004, Polarization anisotropy in self-assembled quantum dots within transient absorption bleaching. in Proc. 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics. pp. 682-685, conference; 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics, 1/01/04.

Polarization anisotropy in self-assembled quantum dots within transient absorption bleaching. / Bogaart, E.W.; Haverkort, J.E.M.; Eijkemans, T.J. et al.
Proc. 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics. 2004. p. 682-685.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Polarization anisotropy in self-assembled quantum dots within transient absorption bleaching

AU - Bogaart, E.W.

AU - Haverkort, J.E.M.

AU - Eijkemans, T.J.

AU - Mano, T.

AU - Nötzel, R.

AU - Wolter, J.H.

PY - 2004

Y1 - 2004

N2 - Excitation dependent optical anisotropy in InAs/GaAs quantum dots is studied by means of timeresolved differential reflection spectroscopy, probing the linear polarization eigenstates. The measured dependence of the bleaching is due to linear dichroism. A dichroism of 1.3 is observed, which is determined by strain.

AB - Excitation dependent optical anisotropy in InAs/GaAs quantum dots is studied by means of timeresolved differential reflection spectroscopy, probing the linear polarization eigenstates. The measured dependence of the bleaching is due to linear dichroism. A dichroism of 1.3 is observed, which is determined by strain.

M3 - Conference contribution

SN - 90-73461-43-X

SP - 682

EP - 685

BT - Proc. 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics

T2 - conference; 7th Ann. Worksh. STW SAFE on semiconductor advances for future electronics

Y2 - 1 January 2004

ER -

Polarization anisotropy in self-assembled quantum dots within transient absorption bleaching

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