Plasma-surface interaction and surface diffusion during silicon-based thin-film growth

J.P.M. Hoefnagels; E. Langereis; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1109/TPS.2005.845132

Plasma-surface interaction and surface diffusion during silicon-based thin-film growth

J.P.M. Hoefnagels, E. Langereis, W.M.M. Kessels, M.C.M. Sanden, van de

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Abstract

Insight into the interaction between plasma and the surface can be obtained from well-defined radical and ion beam studies using advanced surface diagnostics. Therefore, in this paper, a new ultrahigh vacuum setup is presented for a fundamental study of the plasma deposition process of hydrogenated amorphous silicon (a-Si:H). A first study of the surface diffusion process of plasma radicals is presented by visualizing the surface roughness evolution of the films as a function of bulk thickness and substrate temperature.

Original language	English
Pages (from-to)	234-235
Journal	IEEE Transactions on Plasma Science
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/TPS.2005.845132
Publication status	Published - 2005

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title = "Plasma-surface interaction and surface diffusion during silicon-based thin-film growth",

abstract = "Insight into the interaction between plasma and the surface can be obtained from well-defined radical and ion beam studies using advanced surface diagnostics. Therefore, in this paper, a new ultrahigh vacuum setup is presented for a fundamental study of the plasma deposition process of hydrogenated amorphous silicon (a-Si:H). A first study of the surface diffusion process of plasma radicals is presented by visualizing the surface roughness evolution of the films as a function of bulk thickness and substrate temperature.",

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AU - Sanden, van de, M.C.M.

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AB - Insight into the interaction between plasma and the surface can be obtained from well-defined radical and ion beam studies using advanced surface diagnostics. Therefore, in this paper, a new ultrahigh vacuum setup is presented for a fundamental study of the plasma deposition process of hydrogenated amorphous silicon (a-Si:H). A first study of the surface diffusion process of plasma radicals is presented by visualizing the surface roughness evolution of the films as a function of bulk thickness and substrate temperature.

U2 - 10.1109/TPS.2005.845132

DO - 10.1109/TPS.2005.845132

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JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

IS - 2

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Plasma-surface interaction and surface diffusion during silicon-based thin-film growth

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