Plasma-surface interaction and surface diffusion during silicon-based thin-film growth

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Abstract

Insight into the interaction between plasma and the surface can be obtained from well-defined radical and ion beam studies using advanced surface diagnostics. Therefore, in this paper, a new ultrahigh vacuum setup is presented for a fundamental study of the plasma deposition process of hydrogenated amorphous silicon (a-Si:H). A first study of the surface diffusion process of plasma radicals is presented by visualizing the surface roughness evolution of the films as a function of bulk thickness and substrate temperature.
Original languageEnglish
Pages (from-to)234-235
JournalIEEE Transactions on Plasma Science
Volume33
Issue number2
DOIs
Publication statusPublished - 2005

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