Plasma processing of microcrystalline silicon films : filling in the gaps

Engineering

• Crystalline Silicon 100%
• Plasma Applications 100%
• Microcrystalline Silicon 100%
• Atomic Hydrogen 41%
• Ion Energy 33%
• Ion Implantation 25%
• Solar Cell 25%
• Fourier Transform 16%
• Etch Rate 16%
• Energy Gap 16%
• Parallel Plate 16%
• Excitation Frequency 16%
• Growing Film 16%
• Plasma Reactor 16%
• Infrared Light 16%
• Subsurface 16%
• Grain Boundary 16%
• Surface Layer 16%
• Defects 8%
• Photovoltaics 8%
• Porosity 8%
• High Growth Rate 8%
• High Deposition Rate 8%
• Capacitive 8%
• Hydrogenated Amorphous Silicon 8%
• Growth Condition 8%
• Phase Material 8%
• Growth Mechanism 8%
• Deposition Condition 8%
• Mixed Phase 8%
• Crystal Growth 8%
• Si-Si Bond 8%
• Si Deposition 8%
• Deposition Flux 8%
• Absorber Layer 8%
• Thin Films 8%
• Gas Mixture 8%
• Germany 8%
• Deposition Rate 8%

Material Science

• Film 100%
• Crystalline Material 100%
• Silicon 100%
• Microcrystalline Silicon 100%
• Oxidation Reaction 50%
• Film Growth 25%
• Solar Cell 25%
• Ion Implantation 25%
• Fourier Transform Infrared Spectroscopy 16%
• Grain Boundary 16%
• Photovoltaics 8%
• Silane 8%
• Crystal Growth 8%
• Amorphous Silicon 8%
• Amorphization 8%
• Materials Property 8%
• Thin Films 8%
• Gas Mixture 8%