Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

T.H.J. Bisschops, F.J. Hoog, de, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

31 Downloads (Pure)

Abstract

A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]
Original languageEnglish
Title of host publicationSASP 86 : symposium on atomic and surface physics : contributions
EditorsF. Howorka, W. Lindinger, T.D. Maerk
Place of PublicationInnsbruck
PublisherUniversität Innsbruck
Pages195-200
Publication statusPublished - 1986

Fingerprint

carbon tetrafluoride
dioxides
silicon dioxide
line spectra
occurrences
electrodes
geometry

Cite this

Bisschops, T. H. J., Hoog, de, F. J., & Schram, D. C. (1986). Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma. In F. Howorka, W. Lindinger, & T. D. Maerk (Eds.), SASP 86 : symposium on atomic and surface physics : contributions (pp. 195-200). Innsbruck: Universität Innsbruck.
Bisschops, T.H.J. ; Hoog, de, F.J. ; Schram, D.C. / Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma. SASP 86 : symposium on atomic and surface physics : contributions . editor / F. Howorka ; W. Lindinger ; T.D. Maerk. Innsbruck : Universität Innsbruck, 1986. pp. 195-200
@inproceedings{f70bea8d67a643958ef0a0a5fde90910,
title = "Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma",
abstract = "A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]",
author = "T.H.J. Bisschops and {Hoog, de}, F.J. and D.C. Schram",
year = "1986",
language = "English",
pages = "195--200",
editor = "F. Howorka and W. Lindinger and T.D. Maerk",
booktitle = "SASP 86 : symposium on atomic and surface physics : contributions",
publisher = "Universit{\"a}t Innsbruck",

}

Bisschops, THJ, Hoog, de, FJ & Schram, DC 1986, Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma. in F Howorka, W Lindinger & TD Maerk (eds), SASP 86 : symposium on atomic and surface physics : contributions . Universität Innsbruck, Innsbruck, pp. 195-200.

Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma. / Bisschops, T.H.J.; Hoog, de, F.J.; Schram, D.C.

SASP 86 : symposium on atomic and surface physics : contributions . ed. / F. Howorka; W. Lindinger; T.D. Maerk. Innsbruck : Universität Innsbruck, 1986. p. 195-200.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

AU - Bisschops, T.H.J.

AU - Hoog, de, F.J.

AU - Schram, D.C.

PY - 1986

Y1 - 1986

N2 - A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]

AB - A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]

M3 - Conference contribution

SP - 195

EP - 200

BT - SASP 86 : symposium on atomic and surface physics : contributions

A2 - Howorka, F.

A2 - Lindinger, W.

A2 - Maerk, T.D.

PB - Universität Innsbruck

CY - Innsbruck

ER -

Bisschops THJ, Hoog, de FJ, Schram DC. Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma. In Howorka F, Lindinger W, Maerk TD, editors, SASP 86 : symposium on atomic and surface physics : contributions . Innsbruck: Universität Innsbruck. 1986. p. 195-200