Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

T.H.J. Bisschops; F.J. Hoog, de; D.C. Schram

Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

T.H.J. Bisschops, F.J. Hoog, de, D.C. Schram

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]

Original language	English
Title of host publication	SASP 86 : symposium on atomic and surface physics : contributions
Editors	F. Howorka, W. Lindinger, T.D. Maerk
Place of Publication	Innsbruck
Publisher	Universität Innsbruck
Pages	195-200
Publication status	Published - 1986

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title = "Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma",

abstract = "A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]",

author = "T.H.J. Bisschops and {Hoog, de}, F.J. and D.C. Schram",

year = "1986",

language = "English",

pages = "195--200",

editor = "F. Howorka and W. Lindinger and T.D. Maerk",

booktitle = "SASP 86 : symposium on atomic and surface physics : contributions",

publisher = "Universit{\"a}t Innsbruck",

}

Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma. / Bisschops, T.H.J.; Hoog, de, F.J.; Schram, D.C.
SASP 86 : symposium on atomic and surface physics : contributions . ed. / F. Howorka; W. Lindinger; T.D. Maerk. Innsbruck: Universität Innsbruck, 1986. p. 195-200.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

AU - Bisschops, T.H.J.

AU - Hoog, de, F.J.

AU - Schram, D.C.

PY - 1986

Y1 - 1986

N2 - A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]

AB - A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]

M3 - Conference contribution

SP - 195

EP - 200

BT - SASP 86 : symposium on atomic and surface physics : contributions

A2 - Howorka, F.

A2 - Lindinger, W.

A2 - Maerk, T.D.

PB - Universität Innsbruck

CY - Innsbruck

ER -

Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

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