Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

T.H.J. Bisschops, F.J. Hoog, de, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)]
Original languageEnglish
Title of host publicationSASP 86 : symposium on atomic and surface physics : contributions
EditorsF. Howorka, W. Lindinger, T.D. Maerk
Place of PublicationInnsbruck
PublisherUniversität Innsbruck
Pages195-200
Publication statusPublished - 1986

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