Abstract
We have developed a low-temperature plasma-enhanced chemical vapor deposition process that facilitates the deposition of silicon nitride films with controlled stress by using periodically alternating high- and low-frequency power sources. Very thick films of 3 mu m with low stress were deposited on InP substrates. Suitable sidewall profiles for metallization are obtained at 250 degrees C deposition temperature. A 3- mu m-thick low-stress nitride film was successfully applied to reduce the capacitance of bond pad for an array of four InP based photodetectors, that were integrated with a four channel phased-array wavelength demultiplexer. The capacitance of the detectors was below 0.5 pF at -5 V bias
| Original language | English |
|---|---|
| Pages (from-to) | 471-473 |
| Journal | Journal of Vacuum Science and Technology A |
| Volume | 14 |
| Issue number | 2 |
| Publication status | Published - 1996 |