Plasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP

L. Shi, C.A.M. Steenbergen, A.H. Vreede, De, M.K. Smit, T.L.M. Scholtes, F.H. Groen, J.W. Pedersen

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Abstract

We have developed a low-temperature plasma-enhanced chemical vapor deposition process that facilitates the deposition of silicon nitride films with controlled stress by using periodically alternating high- and low-frequency power sources. Very thick films of 3 mu m with low stress were deposited on InP substrates. Suitable sidewall profiles for metallization are obtained at 250 degrees C deposition temperature. A 3- mu m-thick low-stress nitride film was successfully applied to reduce the capacitance of bond pad for an array of four InP based photodetectors, that were integrated with a four channel phased-array wavelength demultiplexer. The capacitance of the detectors was below 0.5 pF at -5 V bias
Original languageEnglish
Pages (from-to)471-473
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume14
Issue number2
Publication statusPublished - 1996

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