Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma

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Abstract

The growth of tungsten oxide (WO3) thin films by atomic layer deposition (ALD) offers numerous merits including atomic-scale thickness control at low deposition temperatures. In this work, we have developed and characterized a new plasma-enhanced ALD process for WO3 thin films using the metalorganic precursor (tBuN)2(Me2N)2W and O2 plasma as co-reactant over a wide temperature range of 100 °C-400 °C. The influence of deposition temperature on the growth behaviour and film properties is investigated in detail. The WO3 ALD process developed in this work yields a relatively high growth per cycle (GPC) which varies from ~0.7 Å at 100 °C to ~0.45 Å at 400 °C, as-determined by in-situ spectroscopic ellipsometry (SE). Rutherford backscattering spectrometry (RBS) measurements revealed a mass density of 5.9 g/cm3 and near stoichiometric film composition (O/W = 2.9). Both RBS and X-ray photoelectron spectroscopy (XPS) measurements confirmed no detectable C as well as N impurity incorporation. Grazing incidence X-ray diffraction (GI-XRD) measurements indicated that the films deposited at 400 °C were polycrystalline in nature.
Original languageEnglish
Article number01B103
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume36
Issue number1
DOIs
Publication statusPublished - 13 Jan 2018

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tungsten oxides
Atomic layer deposition
atomic layer epitaxy
Oxide films
Tungsten
Rutherford backscattering spectroscopy
Plasmas
Thin films
Spectrometry
backscattering
thin films
Thickness control
Spectroscopic ellipsometry
grazing incidence
Temperature
spectroscopy
ellipsometry
temperature
x rays
X ray photoelectron spectroscopy

Cite this

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title = "Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma",
abstract = "The growth of tungsten oxide (WO3) thin films by atomic layer deposition (ALD) offers numerous merits including atomic-scale thickness control at low deposition temperatures. In this work, we have developed and characterized a new plasma-enhanced ALD process for WO3 thin films using the metalorganic precursor (tBuN)2(Me2N)2W and O2 plasma as co-reactant over a wide temperature range of 100 °C-400 °C. The influence of deposition temperature on the growth behaviour and film properties is investigated in detail. The WO3 ALD process developed in this work yields a relatively high growth per cycle (GPC) which varies from ~0.7 {\AA} at 100 °C to ~0.45 {\AA} at 400 °C, as-determined by in-situ spectroscopic ellipsometry (SE). Rutherford backscattering spectrometry (RBS) measurements revealed a mass density of 5.9 g/cm3 and near stoichiometric film composition (O/W = 2.9). Both RBS and X-ray photoelectron spectroscopy (XPS) measurements confirmed no detectable C as well as N impurity incorporation. Grazing incidence X-ray diffraction (GI-XRD) measurements indicated that the films deposited at 400 °C were polycrystalline in nature.",
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AU - Balasubramanyam, S.

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AU - Kessels, W.M.M.

AU - Bol, A.A.

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AB - The growth of tungsten oxide (WO3) thin films by atomic layer deposition (ALD) offers numerous merits including atomic-scale thickness control at low deposition temperatures. In this work, we have developed and characterized a new plasma-enhanced ALD process for WO3 thin films using the metalorganic precursor (tBuN)2(Me2N)2W and O2 plasma as co-reactant over a wide temperature range of 100 °C-400 °C. The influence of deposition temperature on the growth behaviour and film properties is investigated in detail. The WO3 ALD process developed in this work yields a relatively high growth per cycle (GPC) which varies from ~0.7 Å at 100 °C to ~0.45 Å at 400 °C, as-determined by in-situ spectroscopic ellipsometry (SE). Rutherford backscattering spectrometry (RBS) measurements revealed a mass density of 5.9 g/cm3 and near stoichiometric film composition (O/W = 2.9). Both RBS and X-ray photoelectron spectroscopy (XPS) measurements confirmed no detectable C as well as N impurity incorporation. Grazing incidence X-ray diffraction (GI-XRD) measurements indicated that the films deposited at 400 °C were polycrystalline in nature.

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