Abstract
| Original language | English |
|---|---|
| Article number | 01B103 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films |
| Volume | 36 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 13 Jan 2018 |
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Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma. / Balasubramanyam, S.; Sharma, A.; Vandalon, V.; Knoops, H.C.M.; Kessels, W.M.M.; Bol, A.A.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, Vol. 36, No. 1, 01B103, 13.01.2018.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
AU - Balasubramanyam, S.
AU - Sharma, A.
AU - Vandalon, V.
AU - Knoops, H.C.M.
AU - Kessels, W.M.M.
AU - Bol, A.A.
PY - 2018/1/13
Y1 - 2018/1/13
N2 - The growth of tungsten oxide (WO3) thin films by atomic layer deposition (ALD) offers numerous merits including atomic-scale thickness control at low deposition temperatures. In this work, we have developed and characterized a new plasma-enhanced ALD process for WO3 thin films using the metalorganic precursor (tBuN)2(Me2N)2W and O2 plasma as co-reactant over a wide temperature range of 100 °C-400 °C. The influence of deposition temperature on the growth behaviour and film properties is investigated in detail. The WO3 ALD process developed in this work yields a relatively high growth per cycle (GPC) which varies from ~0.7 Å at 100 °C to ~0.45 Å at 400 °C, as-determined by in-situ spectroscopic ellipsometry (SE). Rutherford backscattering spectrometry (RBS) measurements revealed a mass density of 5.9 g/cm3 and near stoichiometric film composition (O/W = 2.9). Both RBS and X-ray photoelectron spectroscopy (XPS) measurements confirmed no detectable C as well as N impurity incorporation. Grazing incidence X-ray diffraction (GI-XRD) measurements indicated that the films deposited at 400 °C were polycrystalline in nature.
AB - The growth of tungsten oxide (WO3) thin films by atomic layer deposition (ALD) offers numerous merits including atomic-scale thickness control at low deposition temperatures. In this work, we have developed and characterized a new plasma-enhanced ALD process for WO3 thin films using the metalorganic precursor (tBuN)2(Me2N)2W and O2 plasma as co-reactant over a wide temperature range of 100 °C-400 °C. The influence of deposition temperature on the growth behaviour and film properties is investigated in detail. The WO3 ALD process developed in this work yields a relatively high growth per cycle (GPC) which varies from ~0.7 Å at 100 °C to ~0.45 Å at 400 °C, as-determined by in-situ spectroscopic ellipsometry (SE). Rutherford backscattering spectrometry (RBS) measurements revealed a mass density of 5.9 g/cm3 and near stoichiometric film composition (O/W = 2.9). Both RBS and X-ray photoelectron spectroscopy (XPS) measurements confirmed no detectable C as well as N impurity incorporation. Grazing incidence X-ray diffraction (GI-XRD) measurements indicated that the films deposited at 400 °C were polycrystalline in nature.
UR - http://www.scopus.com/inward/record.url?scp=85029521825&partnerID=8YFLogxK
U2 - 10.1116/1.4986202
DO - 10.1116/1.4986202
M3 - Article
AN - SCOPUS:85029521825
VL - 36
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
SN - 0734-2101
IS - 1
M1 - 01B103
ER -