Plasma-enhanced ALD of TiO2 using a novel cyclopentadienyl alkylamido precursor [Ti(CPMe)(NMe2)3] and O2 plasma

A. Sarkar, S.E. Potts, S.A. Rushworth, F. Roozeboom, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)
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Abstract

Titanium oxide thin films of both amorphous and anatase morphologies have been deposited using remote plasma ALD over a wide temperature range (100-350 °C), using a novel heteroleptic alkylamido precursor Ti(CpMe)(NMe2)3. A high growth per cycle (GPC) of 0.07-0.08 nm (50 % higher than the GPC obtained with most other organometallic precursors). Films obtained were stoichiometric and of high compositional purity.
Original languageEnglish
Title of host publicationProceedings of the 218th ECS Meeting, 10-15 October, 2010, Las Vegas, USA
Pages385-393
DOIs
Publication statusPublished - 2010
Event218th Electrochemical Society Meeting (ECS 2010) - Las Vegas, United States
Duration: 10 Oct 201015 Oct 2010
Conference number: 218
https://www.electrochem.org/218

Publication series

NameECS Transactions
Volume33
ISSN (Print)1938-6737

Conference

Conference218th Electrochemical Society Meeting (ECS 2010)
Abbreviated titleECS 2010
Country/TerritoryUnited States
CityLas Vegas
Period10/10/1015/10/10
Internet address

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