Abstract
Titanium oxide thin films of both amorphous and anatase morphologies have been deposited using remote plasma ALD over a wide temperature range (100-350 °C), using a novel heteroleptic alkylamido precursor Ti(CpMe)(NMe2)3. A high growth per cycle (GPC) of 0.07-0.08 nm (50 % higher than the GPC obtained with most other organometallic precursors). Films obtained were stoichiometric and of high compositional purity.
Original language | English |
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Title of host publication | Proceedings of the 218th ECS Meeting, 10-15 October, 2010, Las Vegas, USA |
Pages | 385-393 |
DOIs | |
Publication status | Published - 2010 |
Event | 218th Electrochemical Society Meeting (ECS 2010) - Las Vegas, United States Duration: 10 Oct 2010 → 15 Oct 2010 Conference number: 218 https://www.electrochem.org/218 |
Publication series
Name | ECS Transactions |
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Volume | 33 |
ISSN (Print) | 1938-6737 |
Conference
Conference | 218th Electrochemical Society Meeting (ECS 2010) |
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Abbreviated title | ECS 2010 |
Country/Territory | United States |
City | Las Vegas |
Period | 10/10/10 → 15/10/10 |
Internet address |