Plasma atomic layer deposition

Harm C.M. Knoops (Inventor), Koen de Peuter (Inventor), Wilhelmus M.M. Kessels (Inventor)

Research output: PatentPatent publication

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Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.

Original languageEnglish
Patent numberUS9637823
Priority date1/10/15
Publication statusPublished - 2 May 2017


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