Plasma atomic layer deposition

H.C.M. Knoops (Inventor), K. de Peuter (Inventor), W.M.M. Kessels (Inventor)

Research output: PatentPatent publication

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Abstract

Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.
Original languageEnglish
Patent numberUS20150279681 (A1)
Publication statusPublished - 1 Oct 2015

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