@inproceedings{d0cc90c6443649dfa6d8ef787666e2dc,
title = "Plasma assisted particle contamination control: Plasma charging dependence on particle morphology",
abstract = "With the introduction of EUV lithography, the control of contamination in advanced semiconductor processes has become increasingly critical. Our work is a joint effort (TU/e and VDL-ETG) and is aimed at the development of plasma-assisted contamination control strategies mainly focusing on airborne particles in a low pressure gas. We present experiments comparing the charge-to-mass ratio of single spherical micron-sized particles with that of non-spherical agglomerates thereof in the spatial plasma afterglow. It is shown that the charge-to-mass ratio of two-particle clusters deviates only 6% from that of singlets. This means that for the proposed mitigation strategy, of which the efficiency is based on the charge-to-mass ratio, it is acceptable to study the charging of spherical particles and to extrapolate the results towards non-spherical particles within a reasonable range.",
keywords = "Afterglow, Charge-to-mass ratio, Complex plasma, Contamination control, EUV Lithography, Microparticles, Non-spherical particles, Plasma",
author = "{van Huijstee}, J.C.A. and {van Minderhout}, B. and R.M.H. Rompelberg and P. Blom and T. Peijnenburg and J. Beckers",
note = "Publisher Copyright: {\textcopyright} 2021 SPIE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; SPIE Advanced Lithography 2021 ; Conference date: 22-02-2021 Through 26-02-2021",
year = "2021",
doi = "10.1117/12.2584607",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Ofer Adan and Robinson, {John C.}",
booktitle = "Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV",
address = "United States",
}