Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

S.B.S. Heil; F. Roozeboom; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1116/1.2905250

Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

S.B.S. Heil, F. Roozeboom, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Tantalum oxide (Ta2O5) films were synthesized by plasma-assisted at. layer deposition from pentakis(dimethylamino)tantalum (Ta[N(CH3)2]5), precursor and remote O2 plasma as oxidn. source. Film growth was monitored in situ by spectroscopic ellipsometry, and film properties were investigated for deposition temps. between 100 and 225 DegC. Satd. precursor dosing conditions and plasma exposure times were identified and growth rates ranging from 0.8 A/cycle at 225 DegC to 0.87 A/cycle at 100 DegC were obtained. The deposited films were found to be stoichiometric (Ta:O=2:5). Moreover, no N incorporation was detected, and the C content was below the detection limit of the Rutherford backscattering measurement (

Original language	English
Pages (from-to)	472-480
Journal	Journal of Vacuum Science and Technology A
Volume	26
Issue number	3
DOIs	https://doi.org/10.1116/1.2905250
Publication status	Published - 2008

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title = "Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma",

abstract = "Tantalum oxide (Ta2O5) films were synthesized by plasma-assisted at. layer deposition from pentakis(dimethylamino)tantalum (Ta[N(CH3)2]5), precursor and remote O2 plasma as oxidn. source. Film growth was monitored in situ by spectroscopic ellipsometry, and film properties were investigated for deposition temps. between 100 and 225 DegC. Satd. precursor dosing conditions and plasma exposure times were identified and growth rates ranging from 0.8 A/cycle at 225 DegC to 0.87 A/cycle at 100 DegC were obtained. The deposited films were found to be stoichiometric (Ta:O=2:5). Moreover, no N incorporation was detected, and the C content was below the detection limit of the Rutherford backscattering measurement (",

author = "S.B.S. Heil and F. Roozeboom and {Sanden, van de}, M.C.M. and W.M.M. Kessels",

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T1 - Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

AU - Heil, S.B.S.

AU - Roozeboom, F.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2008

Y1 - 2008

N2 - Tantalum oxide (Ta2O5) films were synthesized by plasma-assisted at. layer deposition from pentakis(dimethylamino)tantalum (Ta[N(CH3)2]5), precursor and remote O2 plasma as oxidn. source. Film growth was monitored in situ by spectroscopic ellipsometry, and film properties were investigated for deposition temps. between 100 and 225 DegC. Satd. precursor dosing conditions and plasma exposure times were identified and growth rates ranging from 0.8 A/cycle at 225 DegC to 0.87 A/cycle at 100 DegC were obtained. The deposited films were found to be stoichiometric (Ta:O=2:5). Moreover, no N incorporation was detected, and the C content was below the detection limit of the Rutherford backscattering measurement (

AB - Tantalum oxide (Ta2O5) films were synthesized by plasma-assisted at. layer deposition from pentakis(dimethylamino)tantalum (Ta[N(CH3)2]5), precursor and remote O2 plasma as oxidn. source. Film growth was monitored in situ by spectroscopic ellipsometry, and film properties were investigated for deposition temps. between 100 and 225 DegC. Satd. precursor dosing conditions and plasma exposure times were identified and growth rates ranging from 0.8 A/cycle at 225 DegC to 0.87 A/cycle at 100 DegC were obtained. The deposited films were found to be stoichiometric (Ta:O=2:5). Moreover, no N incorporation was detected, and the C content was below the detection limit of the Rutherford backscattering measurement (

U2 - 10.1116/1.2905250

DO - 10.1116/1.2905250

M3 - Article

SN - 0734-2101

VL - 26

SP - 472

EP - 480

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 3

ER -

Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

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