Plasma-assisted atomic layer deposition of low temperature SiO2

G. Dingemans; C.A.A. Helvoirt, van; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1149/1.3572283

Plasma-assisted atomic layer deposition of low temperature SiO2

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of 50-400 oC. H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The growth process was characterized in detail, using various in situ diagnostics. Ultrashort precursor doses (~50 ms) were found to be sufficient to reach self-limiting ALD growth with a growth-per-cycle of ~1 Å. The films exhibited a refractive index of 1.46 ± 0.02, a mass density of 2.0 ± 0.1 g/cm3, and an O/Si ratio of 2.1 ± 0.1, virtually independent of the substrate temperature. The results therefore demonstrate an efficient ALD process for the conformal and uniform deposition of SiO2 at low substrate temperatures. Also the surface chemistry during the plasma ALD process and surface passivation performance of the ALD SiO2 films on crystalline silicon surfaces are briefly addressed.

Original language	English
Title of host publication	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Editors	R. Sah
Pages	191-204
DOIs	https://doi.org/10.1149/1.3572283
Publication status	Published - 2011
Event	219th Electrochemical Society Meeting (ECS 2011) - The Palais des Congres de Montreal, Montreal, QC, Canada Duration: 1 May 2011 → 6 May 2011 Conference number: 219 https://www.electrochem.org/219

Publication series

Name	ECS Transactions
Volume	35
ISSN (Print)	1938-6737

Conference

Conference	219th Electrochemical Society Meeting (ECS 2011)
Abbreviated title	ECS 2011
Country/Territory	Canada
City	Montreal, QC
Period	1/05/11 → 6/05/11
Internet address	https://www.electrochem.org/219

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10.1149/1.3572283

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title = "Plasma-assisted atomic layer deposition of low temperature SiO2",

abstract = "Atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of 50-400 oC. H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The growth process was characterized in detail, using various in situ diagnostics. Ultrashort precursor doses (\textasciitilde{}50 ms) were found to be sufficient to reach self-limiting ALD growth with a growth-per-cycle of \textasciitilde{}1 {\AA}. The films exhibited a refractive index of 1.46 ± 0.02, a mass density of 2.0 ± 0.1 g/cm3, and an O/Si ratio of 2.1 ± 0.1, virtually independent of the substrate temperature. The results therefore demonstrate an efficient ALD process for the conformal and uniform deposition of SiO2 at low substrate temperatures. Also the surface chemistry during the plasma ALD process and surface passivation performance of the ALD SiO2 films on crystalline silicon surfaces are briefly addressed.",

author = "G. Dingemans and \{Helvoirt, van\}, C.A.A. and \{Sanden, van de\}, M.C.M. and W.M.M. Kessels",

year = "2011",

doi = "10.1149/1.3572283",

language = "English",

series = "ECS Transactions",

pages = "191--204",

editor = "R. Sah",

booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11",

note = "219th Electrochemical Society Meeting (ECS 2011), ECS 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

url = "https://www.electrochem.org/219",

}

Dingemans, G, Helvoirt, van, CAA , Sanden, van de, MCM & Kessels, WMM 2011, Plasma-assisted atomic layer deposition of low temperature SiO2. in R Sah (ed.), Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. ECS Transactions, vol. 35, pp. 191-204, 219th Electrochemical Society Meeting (ECS 2011), Montreal, QC, Canada, 1/05/11. https://doi.org/10.1149/1.3572283

Plasma-assisted atomic layer deposition of low temperature SiO2. / Dingemans, G.; Helvoirt, van, C.A.A.; Sanden, van de, M.C.M. et al.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. ed. / R. Sah. 2011. p. 191-204 (ECS Transactions; Vol. 35).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Plasma-assisted atomic layer deposition of low temperature SiO2

AU - Dingemans, G.

AU - Helvoirt, van, C.A.A.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

N1 - Conference code: 219

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N2 - Atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of 50-400 oC. H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The growth process was characterized in detail, using various in situ diagnostics. Ultrashort precursor doses (~50 ms) were found to be sufficient to reach self-limiting ALD growth with a growth-per-cycle of ~1 Å. The films exhibited a refractive index of 1.46 ± 0.02, a mass density of 2.0 ± 0.1 g/cm3, and an O/Si ratio of 2.1 ± 0.1, virtually independent of the substrate temperature. The results therefore demonstrate an efficient ALD process for the conformal and uniform deposition of SiO2 at low substrate temperatures. Also the surface chemistry during the plasma ALD process and surface passivation performance of the ALD SiO2 films on crystalline silicon surfaces are briefly addressed.

AB - Atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of 50-400 oC. H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The growth process was characterized in detail, using various in situ diagnostics. Ultrashort precursor doses (~50 ms) were found to be sufficient to reach self-limiting ALD growth with a growth-per-cycle of ~1 Å. The films exhibited a refractive index of 1.46 ± 0.02, a mass density of 2.0 ± 0.1 g/cm3, and an O/Si ratio of 2.1 ± 0.1, virtually independent of the substrate temperature. The results therefore demonstrate an efficient ALD process for the conformal and uniform deposition of SiO2 at low substrate temperatures. Also the surface chemistry during the plasma ALD process and surface passivation performance of the ALD SiO2 films on crystalline silicon surfaces are briefly addressed.

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M3 - Conference contribution

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BT - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11

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T2 - 219th Electrochemical Society Meeting (ECS 2011)

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ER -

Plasma-assisted atomic layer deposition of low temperature SiO2

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