Thin Al2O3 films were deposited on silicon and poly(2,6 ethylenenaphthalate) (PEN) substrates by means of plasmaassisted atomic layer deposition (PA-ALD) carried out at low substrate temperature (25-200°C) and consisting of sequential trimethylaluminum (TMA) and (remote) O2 plasma exposures. Because of the advances which ALD could bring to the area of flexible electronics in terms of deposition of ultra thin, conformal, virtually defect- free moisture permeation barriers, ALDof inorganic layers (mainly Al2O3) on polymers is presently actively under investigation. In this contribution we address the PA-ALD Al2O3 film characterization, as well as the initial evaluation of the moisture permeation barrier properties of the Al2O3/PEN composites. Moreover, we briefly comment on the advantages related to the use of PA-ALD compared to thermal ALD processes when low substrate temperatures are chosen.
|Title of host publication||Proceedings 49th Annual Technical Conference of Vacuum Coaters, Washington DC, USA|
|Publication status||Published - 2006|