Plasma-assisted atomic layer deposition of Al-2O3 on polymers

E. Langereis; S.B.S. Heil; M. Creatore; M.C.M. Sanden, van de; W.M.M. Kessels

Plasma-assisted atomic layer deposition of Al-2O3 on polymers

E. Langereis, S.B.S. Heil, M. Creatore, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

3 Downloads (Pure)

Abstract

Thin Al2O3 films were deposited on silicon and poly(2,6 ethylenenaphthalate) (PEN) substrates by means of plasmaassisted atomic layer deposition (PA-ALD) carried out at low substrate temperature (25-200°C) and consisting of sequential trimethylaluminum (TMA) and (remote) O2 plasma exposures. Because of the advances which ALD could bring to the area of flexible electronics in terms of deposition of ultra thin, conformal, virtually defect- free moisture permeation barriers, ALDof inorganic layers (mainly Al2O3) on polymers is presently actively under investigation. In this contribution we address the PA-ALD Al2O3 film characterization, as well as the initial evaluation of the moisture permeation barrier properties of the Al2O3/PEN composites. Moreover, we briefly comment on the advantages related to the use of PA-ALD compared to thermal ALD processes when low substrate temperatures are chosen.

Original language	English
Title of host publication	Proceedings 49th Annual Technical Conference of Vacuum Coaters, Washington DC, USA
Pages	151-
Publication status	Published - 2006

Cite this

@inproceedings{066e401223bc4a5f99fbb95d07b98a1e,

title = "Plasma-assisted atomic layer deposition of Al-2O3 on polymers",

abstract = "Thin Al2O3 films were deposited on silicon and poly(2,6 ethylenenaphthalate) (PEN) substrates by means of plasmaassisted atomic layer deposition (PA-ALD) carried out at low substrate temperature (25-200°C) and consisting of sequential trimethylaluminum (TMA) and (remote) O2 plasma exposures. Because of the advances which ALD could bring to the area of flexible electronics in terms of deposition of ultra thin, conformal, virtually defect- free moisture permeation barriers, ALDof inorganic layers (mainly Al2O3) on polymers is presently actively under investigation. In this contribution we address the PA-ALD Al2O3 film characterization, as well as the initial evaluation of the moisture permeation barrier properties of the Al2O3/PEN composites. Moreover, we briefly comment on the advantages related to the use of PA-ALD compared to thermal ALD processes when low substrate temperatures are chosen.",

author = "E. Langereis and S.B.S. Heil and M. Creatore and {Sanden, van de}, M.C.M. and W.M.M. Kessels",

year = "2006",

language = "English",

pages = "151--",

booktitle = "Proceedings 49th Annual Technical Conference of Vacuum Coaters, Washington DC, USA",

}

TY - GEN

T1 - Plasma-assisted atomic layer deposition of Al-2O3 on polymers

AU - Langereis, E.

AU - Heil, S.B.S.

AU - Creatore, M.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2006

Y1 - 2006

N2 - Thin Al2O3 films were deposited on silicon and poly(2,6 ethylenenaphthalate) (PEN) substrates by means of plasmaassisted atomic layer deposition (PA-ALD) carried out at low substrate temperature (25-200°C) and consisting of sequential trimethylaluminum (TMA) and (remote) O2 plasma exposures. Because of the advances which ALD could bring to the area of flexible electronics in terms of deposition of ultra thin, conformal, virtually defect- free moisture permeation barriers, ALDof inorganic layers (mainly Al2O3) on polymers is presently actively under investigation. In this contribution we address the PA-ALD Al2O3 film characterization, as well as the initial evaluation of the moisture permeation barrier properties of the Al2O3/PEN composites. Moreover, we briefly comment on the advantages related to the use of PA-ALD compared to thermal ALD processes when low substrate temperatures are chosen.

AB - Thin Al2O3 films were deposited on silicon and poly(2,6 ethylenenaphthalate) (PEN) substrates by means of plasmaassisted atomic layer deposition (PA-ALD) carried out at low substrate temperature (25-200°C) and consisting of sequential trimethylaluminum (TMA) and (remote) O2 plasma exposures. Because of the advances which ALD could bring to the area of flexible electronics in terms of deposition of ultra thin, conformal, virtually defect- free moisture permeation barriers, ALDof inorganic layers (mainly Al2O3) on polymers is presently actively under investigation. In this contribution we address the PA-ALD Al2O3 film characterization, as well as the initial evaluation of the moisture permeation barrier properties of the Al2O3/PEN composites. Moreover, we briefly comment on the advantages related to the use of PA-ALD compared to thermal ALD processes when low substrate temperatures are chosen.

M3 - Conference contribution

SP - 151-

BT - Proceedings 49th Annual Technical Conference of Vacuum Coaters, Washington DC, USA

ER -

Plasma-assisted atomic layer deposition of Al-2O3 on polymers

Abstract

Fingerprint

Cite this