@inproceedings{a4cd4b94be3b4fcd8727485d0efed113,
title = "Plasma-Assisted ALD TiN/Al2O3 stacks for MIMIM Trench Capacitor Applications",
abstract = "In this paper we report on the overall plasma-assisted ALD processes of Al2O3 and TiN conducted in a single reactor chamber and at a single temperature (340 oC). The individual Al2O3 and TiN films in the stack were consecutively deposited in such a way that they were separated by purge intervals ranging from 15 to 300 s. Time-resolved mass spectrometry, TOF-SIMS depth profiles and C-V measurements of the deposited stacks show practically no evidence of precursor cross-contamination by the individual TiN and Al2O3 deposition steps. Based on these results and previous work on planar plasma-assisted ALD TiN/Al2O3/Si MOS capacitor structures, the way was paved to deposit a TiN/Al2O3/TiN/Al2O3 stack on high aspect ratio (~ 17) structures in silicon. Step coverages of at least ~ 90 % and ~ 40 % are consistently obtained for the deposited Al2O3 and TiN layers, respectively. The trench capacitors demonstrated leakage current densities of 10-8 – 10-7 A/cm2, a capacitance density of 180 nF/mm2 and dielectric breakdown field values of 6 – 9 MV/cm.",
author = "D. Hoogeland and K.B. Jinesh and F.C. Voogt and W.F.A. Besling and Y. Lamy and F. Roozeboom and {Sanden, van de}, M.C.M. and W.M.M. Kessels",
year = "2009",
doi = "10.1149/1.3205073",
language = "English",
isbn = "978-1-566-77741-4",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
pages = "389--397",
editor = "{Gendt, de}, S.",
booktitle = "Atomic layer deposition applications 5 : Proceedings of the 5th Symposium on Atomic Layer Deposition as part of the 216th Meeting of the Electrochemical Society 5 -7 October 2009, Vienna",
address = "United States",
note = "conference; Symposium on Atomic Layer Deposition ; 5 (Vienna) : 2009.10.05-07 ; Conference date: 01-01-2009",
}