Plasma-Assisted ALD TiN/Al2O3 stacks for MIMIM Trench Capacitor Applications

D. Hoogeland, K.B. Jinesh, F.C. Voogt, W.F.A. Besling, Y. Lamy, F. Roozeboom, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)
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In this paper we report on the overall plasma-assisted ALD processes of Al2O3 and TiN conducted in a single reactor chamber and at a single temperature (340 oC). The individual Al2O3 and TiN films in the stack were consecutively deposited in such a way that they were separated by purge intervals ranging from 15 to 300 s. Time-resolved mass spectrometry, TOF-SIMS depth profiles and C-V measurements of the deposited stacks show practically no evidence of precursor cross-contamination by the individual TiN and Al2O3 deposition steps. Based on these results and previous work on planar plasma-assisted ALD TiN/Al2O3/Si MOS capacitor structures, the way was paved to deposit a TiN/Al2O3/TiN/Al2O3 stack on high aspect ratio (~ 17) structures in silicon. Step coverages of at least ~ 90 % and ~ 40 % are consistently obtained for the deposited Al2O3 and TiN layers, respectively. The trench capacitors demonstrated leakage current densities of 10-8 – 10-7 A/cm2, a capacitance density of 180 nF/mm2 and dielectric breakdown field values of 6 – 9 MV/cm.
Original languageEnglish
Title of host publicationAtomic layer deposition applications 5 : Proceedings of the 5th Symposium on Atomic Layer Deposition as part of the 216th Meeting of the Electrochemical Society 5 -7 October 2009, Vienna
EditorsS. Gendt, de
Place of PublicationPennington, NJ
PublisherElectrochemical Society, Inc.
ISBN (Print)978-1-566-77741-4
Publication statusPublished - 2009
Eventconference; Symposium on Atomic Layer Deposition ; 5 (Vienna) : 2009.10.05-07 -
Duration: 1 Jan 2009 → …

Publication series

NameECS Transactions
ISSN (Print)1938-6737


Conferenceconference; Symposium on Atomic Layer Deposition ; 5 (Vienna) : 2009.10.05-07
Period1/01/09 → …
OtherSymposium on Atomic Layer Deposition ; 5 (Vienna) : 2009.10.05-07


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