Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties

H. Wang, J. Yuan, P.J. Veldhoven, van, T. Vries, de, E. Smalbrugge, E.J. Geluk, R. Nötzel

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
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Abstract

Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640¿°C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.
Original languageEnglish
Article number104308
Pages (from-to)104308-1/4
Number of pages4
JournalJournal of Applied Physics
Volume108
Issue number10
DOIs
Publication statusPublished - 2010

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