Abstract
Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640¿°C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.
Original language | English |
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Article number | 104308 |
Pages (from-to) | 104308-1/4 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 108 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2010 |