Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties

H. Wang; J. Yuan; P.J. Veldhoven, van; T. Vries, de; E. Smalbrugge; E.J. Geluk; R. Nötzel

doi:10.1063/1.3491025

Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties

H. Wang, J. Yuan, P.J. Veldhoven, van, T. Vries, de, E. Smalbrugge, E.J. Geluk, R. Nötzel

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Abstract

Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640¿°C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.

Original language	English
Article number	104308
Pages (from-to)	104308-1/4
Number of pages	4
Journal	Journal of Applied Physics
Volume	108
Issue number	10
DOIs	https://doi.org/10.1063/1.3491025
Publication status	Published - 2010

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abstract = "Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640¿°C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.",

author = "H. Wang and J. Yuan and {Veldhoven, van}, P.J. and {Vries, de}, T. and E. Smalbrugge and E.J. Geluk and R. N{\"o}tzel",

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AU - Wang, H.

AU - Yuan, J.

AU - Veldhoven, van, P.J.

AU - Vries, de, T.

AU - Smalbrugge, E.

AU - Geluk, E.J.

AU - Nötzel, R.

PY - 2010

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N2 - Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640¿°C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.

AB - Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640¿°C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.

U2 - 10.1063/1.3491025

DO - 10.1063/1.3491025

M3 - Article

VL - 108

SP - 104308-1/4

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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