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Planar non-volatile memory based on metal nanoparticles

  • A. Kiazadeh
  • , H.L. Gomes
  • , A. Rose da Costa
  • , P.R.F. Rocha
  • , Qian Chen
  • , J.A. Moreira
  • , D.M. Leeuw, de
  • , S.C.J. Meskers

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.
Original languageEnglish
Title of host publicationNew Functional Materials and Emerging Device Architectures for Nonvolatile Memories
Place of PublicationPittsburgh
PublisherMaterials Research Society
Pages1-6
Number of pages6
DOIs
Publication statusPublished - 2011

Publication series

NameMaterials Research Society symposium proceedings
Volume1126
ISSN (Print)0272-9172

Bibliographical note

2011 MRS Spring Meeting

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