TY - PAT

T1 - Planar, monolithically integrated coil

AU - Roozeboom, F.

AU - Reefman, D.

AU - Klootwijk, J.H.

AU - Tiemeijer, L.F.

AU - Ruigrok, J.

PY - 2013/3/12

Y1 - 2013/3/12

N2 - The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 [mu]H, and must have an equivalent series resistance of less than 0.1[Omega]. For this reason, those inductors are always bulky components, of a typical size of 221 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.

AB - The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 [mu]H, and must have an equivalent series resistance of less than 0.1[Omega]. For this reason, those inductors are always bulky components, of a typical size of 221 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.

UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=8395472B2&KC=B2&FT=D&ND=4&date=20130312&DB=EPODOC&locale=nl_NL

M3 - Patent publication

M1 - US8395472

ER -