Picosecond carrier lifetime in low-temperature-grown GaAsSb

X. Wallart, C. Coinon, S.R. Plissard, S. Godey, O. Offranc, Y. Androussi, V. Magnin, J.F. Lampin

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)


We study the influence of growth parameters on the properties of low-temperature-grown GaAsSb layers with 15–20% Sb. We demonstrate that a proper choice of growth conditions allows achieving monocrystalline as-grown layers exhibiting carrier lifetime around 1 ps and a resistivity higher than 1 kO·cm. Upon 600 °C annealing, the resistivity strongly decreases, indicating differences with previous observations, which we try to elucidate. The as-grown material properties are promising for THz generation and detection using a wavelength of around 1.05 µm.
Original languageEnglish
Article number111202
Pages (from-to)111202-1/3
Number of pages3
JournalApplied Physics Express
Issue number11
Publication statusPublished - 2010


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