Physics of plasma etching and plasma deposition

D.C. Schram; F.J. Hoog, de; T.J. Bisschops; G.M.W. Kroesen

Physics of plasma etching and plasma deposition

D.C. Schram, F.J. Hoog, de, T.J. Bisschops, G.M.W. Kroesen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas

Original language	English
Title of host publication	SASP 86, symposium on atomic and surface physics : contributions
Editors	F. Howorka, W. Lindinger, T.D. Maerk
Place of Publication	Innsbruck
Publisher	Universität Innsbruck
Pages	181-187
Publication status	Published - 1986

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title = "Physics of plasma etching and plasma deposition",

abstract = "The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas",

author = "D.C. Schram and {Hoog, de}, F.J. and T.J. Bisschops and G.M.W. Kroesen",

year = "1986",

language = "English",

pages = "181--187",

editor = "F. Howorka and W. Lindinger and T.D. Maerk",

booktitle = "SASP 86, symposium on atomic and surface physics : contributions",

publisher = "Universit{\"a}t Innsbruck",

}

Physics of plasma etching and plasma deposition. / Schram, D.C.; Hoog, de, F.J.; Bisschops, T.J. et al.
SASP 86, symposium on atomic and surface physics : contributions. ed. / F. Howorka; W. Lindinger; T.D. Maerk. Innsbruck: Universität Innsbruck, 1986. p. 181-187.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Physics of plasma etching and plasma deposition

AU - Schram, D.C.

AU - Hoog, de, F.J.

AU - Bisschops, T.J.

AU - Kroesen, G.M.W.

PY - 1986

Y1 - 1986

N2 - The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas

AB - The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas

M3 - Conference contribution

SP - 181

EP - 187

BT - SASP 86, symposium on atomic and surface physics : contributions

A2 - Howorka, F.

A2 - Lindinger, W.

A2 - Maerk, T.D.

PB - Universität Innsbruck

CY - Innsbruck

ER -

Physics of plasma etching and plasma deposition

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