Physics of plasma etching and plasma deposition

D.C. Schram, F.J. Hoog, de, T.J. Bisschops, G.M.W. Kroesen

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Abstract

The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas
Original languageEnglish
Title of host publicationSASP 86, symposium on atomic and surface physics : contributions
EditorsF. Howorka, W. Lindinger, T.D. Maerk
Place of PublicationInnsbruck
PublisherUniversität Innsbruck
Pages181-187
Publication statusPublished - 1986

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plasma etching
physics
magnetohydrodynamic flow
etching
kinetics
gases

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Schram, D. C., Hoog, de, F. J., Bisschops, T. J., & Kroesen, G. M. W. (1986). Physics of plasma etching and plasma deposition. In F. Howorka, W. Lindinger, & T. D. Maerk (Eds.), SASP 86, symposium on atomic and surface physics : contributions (pp. 181-187). Innsbruck: Universität Innsbruck.
Schram, D.C. ; Hoog, de, F.J. ; Bisschops, T.J. ; Kroesen, G.M.W. / Physics of plasma etching and plasma deposition. SASP 86, symposium on atomic and surface physics : contributions. editor / F. Howorka ; W. Lindinger ; T.D. Maerk. Innsbruck : Universität Innsbruck, 1986. pp. 181-187
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abstract = "The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas",
author = "D.C. Schram and {Hoog, de}, F.J. and T.J. Bisschops and G.M.W. Kroesen",
year = "1986",
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Schram, DC, Hoog, de, FJ, Bisschops, TJ & Kroesen, GMW 1986, Physics of plasma etching and plasma deposition. in F Howorka, W Lindinger & TD Maerk (eds), SASP 86, symposium on atomic and surface physics : contributions. Universität Innsbruck, Innsbruck, pp. 181-187.

Physics of plasma etching and plasma deposition. / Schram, D.C.; Hoog, de, F.J.; Bisschops, T.J.; Kroesen, G.M.W.

SASP 86, symposium on atomic and surface physics : contributions. ed. / F. Howorka; W. Lindinger; T.D. Maerk. Innsbruck : Universität Innsbruck, 1986. p. 181-187.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AB - The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas

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BT - SASP 86, symposium on atomic and surface physics : contributions

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Schram DC, Hoog, de FJ, Bisschops TJ, Kroesen GMW. Physics of plasma etching and plasma deposition. In Howorka F, Lindinger W, Maerk TD, editors, SASP 86, symposium on atomic and surface physics : contributions. Innsbruck: Universität Innsbruck. 1986. p. 181-187