Physics of plasma etching and plasma deposition

D.C. Schram, F.J. Hoog, de, T.J. Bisschops, G.M.W. Kroesen

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Abstract

The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas
Original languageEnglish
Title of host publicationSASP 86, symposium on atomic and surface physics : contributions
EditorsF. Howorka, W. Lindinger, T.D. Maerk
Place of PublicationInnsbruck
PublisherUniversität Innsbruck
Pages181-187
Publication statusPublished - 1986

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    Schram, D. C., Hoog, de, F. J., Bisschops, T. J., & Kroesen, G. M. W. (1986). Physics of plasma etching and plasma deposition. In F. Howorka, W. Lindinger, & T. D. Maerk (Eds.), SASP 86, symposium on atomic and surface physics : contributions (pp. 181-187). Innsbruck: Universität Innsbruck.