Physical characterization of ALD AI2O3 films deposited on GaAs substrates

A. Franquet; T. Conard; W. Vandervorst; S. Sioncke; M. Caymax; A. Delabie; M.M. Heyns; M. Meuris; G. Brammertz; J.L. Hemmen, van; W. Keuning; W.M.M. Kessels

Physical characterization of ALD AI2O3 films deposited on GaAs substrates

A. Franquet, T. Conard, W. Vandervorst, S. Sioncke, M. Caymax, A. Delabie, M.M. Heyns, M. Meuris, G. Brammertz, J.L. Hemmen, van, W. Keuning, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

No abstract

Original language	English
Title of host publication	Proceedings of ICTF14 & RSD2008 : Ghent, Belgium, 17-20 November 2008
Editors	R. De Gryse, D. Depla, D. Poelman, S. Mathieu, W.P. Leroy, H. Poelman
Place of Publication	Ghent
Pages	46-46
Publication status	Published - 2008
Event	conference; International Conference on Thin Films (ICTF), Ghent Reactive Sputter Deposition Symposium (RSD); 2008-11-17; 2008-11-20 - Duration: 17 Nov 2008 → 20 Nov 2008

Conference

Conference	conference; International Conference on Thin Films (ICTF), Ghent Reactive Sputter Deposition Symposium (RSD); 2008-11-17; 2008-11-20
Period	17/11/08 → 20/11/08
Other	International Conference on Thin Films (ICTF), Ghent Reactive Sputter Deposition Symposium (RSD)

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Franquet, A., Conard, T., Vandervorst, W., Sioncke, S., Caymax, M., Delabie, A., Heyns, M. M., Meuris, M., Brammertz, G., Hemmen, van, J. L., Keuning, W., & Kessels, W. M. M. (2008). Physical characterization of ALD AI2O3 films deposited on GaAs substrates. In R. De Gryse, D. Depla, D. Poelman, S. Mathieu, W. P. Leroy, & H. Poelman (Eds.), Proceedings of ICTF14 & RSD2008 : Ghent, Belgium, 17-20 November 2008 (pp. 46-46).

@inproceedings{69635654898f4532b4217785b0273b1c,

title = "Physical characterization of ALD AI2O3 films deposited on GaAs substrates",

abstract = "No abstract",

author = "A. Franquet and T. Conard and W. Vandervorst and S. Sioncke and M. Caymax and A. Delabie and M.M. Heyns and M. Meuris and G. Brammertz and {Hemmen, van}, J.L. and W. Keuning and W.M.M. Kessels",

year = "2008",

language = "English",

isbn = "978-90-334-7347-0",

pages = "46--46",

editor = "{De Gryse}, R. and D. Depla and D. Poelman and S. Mathieu and W.P. Leroy and H. Poelman",

booktitle = "Proceedings of ICTF14 & RSD2008 : Ghent, Belgium, 17-20 November 2008",

note = "conference; International Conference on Thin Films (ICTF), Ghent Reactive Sputter Deposition Symposium (RSD); 2008-11-17; 2008-11-20 ; Conference date: 17-11-2008 Through 20-11-2008",

}

Franquet, A, Conard, T, Vandervorst, W, Sioncke, S, Caymax, M, Delabie, A, Heyns, MM, Meuris, M, Brammertz, G, Hemmen, van, JL, Keuning, W & Kessels, WMM 2008, Physical characterization of ALD AI2O3 films deposited on GaAs substrates. in R De Gryse, D Depla, D Poelman, S Mathieu, WP Leroy & H Poelman (eds), Proceedings of ICTF14 & RSD2008 : Ghent, Belgium, 17-20 November 2008. Ghent, pp. 46-46, conference; International Conference on Thin Films (ICTF), Ghent Reactive Sputter Deposition Symposium (RSD); 2008-11-17; 2008-11-20, 17/11/08.

Physical characterization of ALD AI2O3 films deposited on GaAs substrates. / Franquet, A.; Conard, T.; Vandervorst, W. et al.
Proceedings of ICTF14 & RSD2008 : Ghent, Belgium, 17-20 November 2008. ed. / R. De Gryse; D. Depla; D. Poelman; S. Mathieu; W.P. Leroy; H. Poelman. Ghent, 2008. p. 46-46.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Physical characterization of ALD AI2O3 films deposited on GaAs substrates

AU - Franquet, A.

AU - Conard, T.

AU - Vandervorst, W.

AU - Sioncke, S.

AU - Caymax, M.

AU - Delabie, A.

AU - Heyns, M.M.

AU - Meuris, M.

AU - Brammertz, G.

AU - Hemmen, van, J.L.

AU - Keuning, W.

AU - Kessels, W.M.M.

PY - 2008

Y1 - 2008

N2 - No abstract

AB - No abstract

M3 - Conference contribution

SN - 978-90-334-7347-0

SP - 46

EP - 46

BT - Proceedings of ICTF14 & RSD2008 : Ghent, Belgium, 17-20 November 2008

A2 - De Gryse, R.

A2 - Depla, D.

A2 - Poelman, D.

A2 - Mathieu, S.

A2 - Leroy, W.P.

A2 - Poelman, H.

CY - Ghent

T2 - conference; International Conference on Thin Films (ICTF), Ghent Reactive Sputter Deposition Symposium (RSD); 2008-11-17; 2008-11-20

Y2 - 17 November 2008 through 20 November 2008

ER -

Physical characterization of ALD AI2O3 films deposited on GaAs substrates

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