Physical-based analytical model of flexible a-IGZO TFTs accounting for both charge injection and transport

M. Ghittorelli, F. Torricelli, J.-L. van der Steen, C. Garripoli, A.K. Tripathi, G. Gelinck, E. Cantatore, Z.M. Kovács-Vajna

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Abstract

Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-
VGS inverter. It is a valuable tool for circuit design and technology characterization.
Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages28.2.1-28.2.4
Number of pages4
Volume2016-February
ISBN (Print)978-1-4673-9893-0
DOIs
Publication statusPublished - 16 Feb 2015
Event2015 IEEE International Electron Devices Meeting (IEDM 2015) - Washington, United States
Duration: 7 Dec 20159 Dec 2015
Conference number: 61

Conference

Conference2015 IEEE International Electron Devices Meeting (IEDM 2015)
Abbreviated titleIEDM 2015
CountryUnited States
CityWashington
Period7/12/159/12/15

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