Photosensitive semiconductor tips in a scanning tunneling microscope

M.C.M.M. Wielen, van der, M.W.J. Prins, R. Jansen, D.L. Abraham, H. Kempen, van

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The photosensitivity of GaAs tips is studied in a scanning tunneling microscope. Measurements of surface photovoltage and zero-bias photocurrent vs. incident light power are presented together with a simple theor. model. It is shown that these tips can be used for measurement of local sample magnetization through the magnetooptical Faraday effect.
Original languageEnglish
Title of host publicationPhotons and Local Probes : Proceedings of the NATO Advanced Research Workshop on Photons and Local Probes, Reichenau, Germany, September 11 - 17, 1994
EditorsM. Othmar
Place of PublicationDordrecht
PublisherKluwer Academic Publishers
Pages275-280
ISBN (Print)0-7923-3709-3
Publication statusPublished - 1995

Publication series

NameNATO ASI Series, Series E: Applied Sciences
Volume300
ISSN (Print)0168-132X

Fingerprint Dive into the research topics of 'Photosensitive semiconductor tips in a scanning tunneling microscope'. Together they form a unique fingerprint.

  • Cite this

    Wielen, van der, M. C. M. M., Prins, M. W. J., Jansen, R., Abraham, D. L., & Kempen, van, H. (1995). Photosensitive semiconductor tips in a scanning tunneling microscope. In M. Othmar (Ed.), Photons and Local Probes : Proceedings of the NATO Advanced Research Workshop on Photons and Local Probes, Reichenau, Germany, September 11 - 17, 1994 (pp. 275-280). (NATO ASI Series, Series E: Applied Sciences; Vol. 300). Dordrecht: Kluwer Academic Publishers.