Photonic switching in InAs/InP quantum dots

J.E.M. Haverkort, R. Prasanth, S. Dilna, E.W. Bogaart, J.J.G.M. Tol, van der, E.A. Patent, G. Zhao, Q. Gong, P.J. Veldhoven, van, R. Nötzel, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


We report all-optical switching due to state-filling in quantum dots (QDs). The switching energy is as low as 6 fJ since state-filling requires only 2 electron-hole pairs per QD. The single layer of InAs/InP QDs is inserted within a InGaAsP/InP waveguide which are processed into a Mach-Zehnder interferometric switch (MZI). A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from above. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is entirely due to state-filling in the QDs.
Original languageEnglish
Title of host publicationProceedings of the 4th IEEE Conference on Nanotechnology, 16 -19 August 2004, Munich, Germany
Place of PublicationNew York
PublisherIEEE Press
ISBN (Print)0-7803-8536-5
Publication statusPublished - 2004


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