Photoluminescence study of silicon delta-doped gallium arsenide

J.C.M. Henning; Y.A.R.R. Kessener; P.M. Koenraad; M.R. Leijs; W.C. Vleuten, van der; J.H. Wolter; A.M. Frens

doi:10.1088/0268-1242/6/11/008

Photoluminescence study of silicon delta-doped gallium arsenide

J.C.M. Henning, Y.A.R.R. Kessener, P.M. Koenraad, M.R. Leijs, W.C. Vleuten, van der, J.H. Wolter, A.M. Frens

Photonics and Semiconductor Nanophysics

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Abstract

A photoluminescence (PL) study is made of (001) oriented GaAs samples containing a single delta doping layer of silicon. Depending on the growth temperature several novel narrow spectral features are observed that are related to the delta doping procedure, but cannot be attributed to transitions involving conduction electron subbands. The nature of one specific PL feature at 1.4977 eV is explored in detail. It is present in delta-doped samples grown at low temperatures (480 degrees C) and shows all the characteristics of a bound exciton recombination. Its most conspicuous properties are a strong linear polarization along (110) and a (001) axially symmetric spin splitting in high magnetic fields. The whole of the spectroscopic data leads to a model in which an exciton is bound to a Si-As-Si complex, aligned along the (110) direction.

Original language	English
Pages (from-to)	1079-1087
Journal	Semiconductor Science and Technology
Volume	6
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/6/11/008
Publication status	Published - 1991

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title = "Photoluminescence study of silicon delta-doped gallium arsenide",

abstract = "A photoluminescence (PL) study is made of (001) oriented GaAs samples containing a single delta doping layer of silicon. Depending on the growth temperature several novel narrow spectral features are observed that are related to the delta doping procedure, but cannot be attributed to transitions involving conduction electron subbands. The nature of one specific PL feature at 1.4977 eV is explored in detail. It is present in delta-doped samples grown at low temperatures (480 degrees C) and shows all the characteristics of a bound exciton recombination. Its most conspicuous properties are a strong linear polarization along (110) and a (001) axially symmetric spin splitting in high magnetic fields. The whole of the spectroscopic data leads to a model in which an exciton is bound to a Si-As-Si complex, aligned along the (110) direction.",

author = "J.C.M. Henning and Y.A.R.R. Kessener and P.M. Koenraad and M.R. Leijs and {Vleuten, van der}, W.C. and J.H. Wolter and A.M. Frens",

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doi = "10.1088/0268-1242/6/11/008",

language = "English",

volume = "6",

pages = "1079--1087",

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TY - JOUR

T1 - Photoluminescence study of silicon delta-doped gallium arsenide

AU - Henning, J.C.M.

AU - Kessener, Y.A.R.R.

AU - Koenraad, P.M.

AU - Leijs, M.R.

AU - Vleuten, van der, W.C.

AU - Wolter, J.H.

AU - Frens, A.M.

PY - 1991

Y1 - 1991

N2 - A photoluminescence (PL) study is made of (001) oriented GaAs samples containing a single delta doping layer of silicon. Depending on the growth temperature several novel narrow spectral features are observed that are related to the delta doping procedure, but cannot be attributed to transitions involving conduction electron subbands. The nature of one specific PL feature at 1.4977 eV is explored in detail. It is present in delta-doped samples grown at low temperatures (480 degrees C) and shows all the characteristics of a bound exciton recombination. Its most conspicuous properties are a strong linear polarization along (110) and a (001) axially symmetric spin splitting in high magnetic fields. The whole of the spectroscopic data leads to a model in which an exciton is bound to a Si-As-Si complex, aligned along the (110) direction.

AB - A photoluminescence (PL) study is made of (001) oriented GaAs samples containing a single delta doping layer of silicon. Depending on the growth temperature several novel narrow spectral features are observed that are related to the delta doping procedure, but cannot be attributed to transitions involving conduction electron subbands. The nature of one specific PL feature at 1.4977 eV is explored in detail. It is present in delta-doped samples grown at low temperatures (480 degrees C) and shows all the characteristics of a bound exciton recombination. Its most conspicuous properties are a strong linear polarization along (110) and a (001) axially symmetric spin splitting in high magnetic fields. The whole of the spectroscopic data leads to a model in which an exciton is bound to a Si-As-Si complex, aligned along the (110) direction.

U2 - 10.1088/0268-1242/6/11/008

DO - 10.1088/0268-1242/6/11/008

M3 - Article

SN - 0268-1242

VL - 6

SP - 1079

EP - 1087

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

ER -

Photoluminescence study of silicon delta-doped gallium arsenide

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