Photoluminescence on low-temperature grown InAs/GaAs quantum dots

D. Sreenivasan; J.E.M. Haverkort; H.H. Zhan; T. Eijkemans; R. Nötzel; J.H. Wolter

Photoluminescence on low-temperature grown InAs/GaAs quantum dots

D. Sreenivasan, J.E.M. Haverkort, H.H. Zhan, T. Eijkemans, R. Nötzel, J.H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We study low temperature (LT, 250°C) grown Stranski-Krastanov InAs/GaAs quantum dots (QDs) to combine the large QD optical nonlinearity with an ultrafast response time. We observe a QD photoluminescence peak around 1200 nm on top of a background due to the AsGa-VAs center. The QD-emission line disappears with increasing temperature around 30K. The PL-efficiency increases with a factor of 45- 280 as a function of excitation wavelength around the GaAs bandgap. Our observations point towards QDs with good optical quality, embedded in a LT-GaAs barrier in which the carriers are efficiently trapped at anti-site defects.

Original language	English
Title of host publication	Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium
Place of Publication	Ghent, Belgium
Pages	291-294
Publication status	Published - 2004
Event	9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium - Ghent, Belgium Duration: 2 Dec 2004 → 3 Dec 2004

Conference

Conference	9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium
Country/Territory	Belgium
City	Ghent
Period	2/12/04 → 3/12/04

Cite this

@inproceedings{fedc530ff73843cbb827ebdf13b6b41a,

title = "Photoluminescence on low-temperature grown InAs/GaAs quantum dots",

abstract = "We study low temperature (LT, 250°C) grown Stranski-Krastanov InAs/GaAs quantum dots (QDs) to combine the large QD optical nonlinearity with an ultrafast response time. We observe a QD photoluminescence peak around 1200 nm on top of a background due to the AsGa-VAs center. The QD-emission line disappears with increasing temperature around 30K. The PL-efficiency increases with a factor of 45- 280 as a function of excitation wavelength around the GaAs bandgap. Our observations point towards QDs with good optical quality, embedded in a LT-GaAs barrier in which the carriers are efficiently trapped at anti-site defects.",

author = "D. Sreenivasan and J.E.M. Haverkort and H.H. Zhan and T. Eijkemans and R. N{\"o}tzel and J.H. Wolter",

year = "2004",

language = "English",

isbn = "90-765-4606-1",

pages = "291--294",

booktitle = "Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium",

note = "9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium ; Conference date: 02-12-2004 Through 03-12-2004",

}

Sreenivasan, D, Haverkort, JEM, Zhan, HH, Eijkemans, T, Nötzel, R & Wolter, JH 2004, Photoluminescence on low-temperature grown InAs/GaAs quantum dots. in Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium. Ghent, Belgium, pp. 291-294, 9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium, Ghent, Belgium, 2/12/04.

Photoluminescence on low-temperature grown InAs/GaAs quantum dots. / Sreenivasan, D.; Haverkort, J.E.M.; Zhan, H.H. et al.
Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium. Ghent, Belgium, 2004. p. 291-294.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Photoluminescence on low-temperature grown InAs/GaAs quantum dots

AU - Sreenivasan, D.

AU - Haverkort, J.E.M.

AU - Zhan, H.H.

AU - Eijkemans, T.

AU - Nötzel, R.

AU - Wolter, J.H.

PY - 2004

Y1 - 2004

N2 - We study low temperature (LT, 250°C) grown Stranski-Krastanov InAs/GaAs quantum dots (QDs) to combine the large QD optical nonlinearity with an ultrafast response time. We observe a QD photoluminescence peak around 1200 nm on top of a background due to the AsGa-VAs center. The QD-emission line disappears with increasing temperature around 30K. The PL-efficiency increases with a factor of 45- 280 as a function of excitation wavelength around the GaAs bandgap. Our observations point towards QDs with good optical quality, embedded in a LT-GaAs barrier in which the carriers are efficiently trapped at anti-site defects.

AB - We study low temperature (LT, 250°C) grown Stranski-Krastanov InAs/GaAs quantum dots (QDs) to combine the large QD optical nonlinearity with an ultrafast response time. We observe a QD photoluminescence peak around 1200 nm on top of a background due to the AsGa-VAs center. The QD-emission line disappears with increasing temperature around 30K. The PL-efficiency increases with a factor of 45- 280 as a function of excitation wavelength around the GaAs bandgap. Our observations point towards QDs with good optical quality, embedded in a LT-GaAs barrier in which the carriers are efficiently trapped at anti-site defects.

M3 - Conference contribution

SN - 90-765-4606-1

SP - 291

EP - 294

BT - Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium

CY - Ghent, Belgium

T2 - 9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium

Y2 - 2 December 2004 through 3 December 2004

ER -

Photoluminescence on low-temperature grown InAs/GaAs quantum dots

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