Photoluminescence from low temperature grown InAs/GaAs quantum dots

D. Sreenivasan; J.E.M. Haverkort; T.J. Eijkemans; R. Nötzel

doi:10.1063/1.2713803

Photoluminescence from low temperature grown InAs/GaAs quantum dots

D. Sreenivasan
, J.E.M. Haverkort
, T.J. Eijkemans
, R. Nötzel

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by mol. beam epitaxy at low temp. (LT, 250 DegC) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was obsd. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45-280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency. [on SciFinder (R)]

Original language	English
Article number	112109
Pages (from-to)	112109-1/3
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2713803
Publication status	Published - 2007

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@article{07d877bb90ad44979cf05d48b8379f10,

title = "Photoluminescence from low temperature grown InAs/GaAs quantum dots",

abstract = "The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by mol. beam epitaxy at low temp. (LT, 250 DegC) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was obsd. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45-280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency. [on SciFinder (R)]",

author = "D. Sreenivasan and J.E.M. Haverkort and T.J. Eijkemans and R. N{\"o}tzel",

year = "2007",

doi = "10.1063/1.2713803",

language = "English",

volume = "90",

pages = "112109--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Photoluminescence from low temperature grown InAs/GaAs quantum dots

AU - Sreenivasan, D.

AU - Haverkort, J.E.M.

AU - Eijkemans, T.J.

AU - Nötzel, R.

PY - 2007

Y1 - 2007

N2 - The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by mol. beam epitaxy at low temp. (LT, 250 DegC) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was obsd. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45-280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency. [on SciFinder (R)]

AB - The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by mol. beam epitaxy at low temp. (LT, 250 DegC) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was obsd. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45-280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency. [on SciFinder (R)]

U2 - 10.1063/1.2713803

DO - 10.1063/1.2713803

M3 - Article

SN - 0003-6951

VL - 90

SP - 112109-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112109

ER -

Photoluminescence from low temperature grown InAs/GaAs quantum dots

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