Photoluminescence from a single InGaAs epitaxial quantum rod

G. Sek; P. Podemski; J. Misiewicz; L. Li; A. Fiore; G. Patriarche

doi:10.1063/1.2832635

Photoluminescence from a single InGaAs epitaxial quantum rod

G. Sek, P. Podemski, J. Misiewicz, L. Li, A. Fiore, G. Patriarche

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Abstract

Microphotoluminescence (µ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the µ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2 meV.

Original language	English
Article number	021901
Pages (from-to)	021901-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	92
Issue number	2
DOIs	https://doi.org/10.1063/1.2832635
Publication status	Published - 2008

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title = "Photoluminescence from a single InGaAs epitaxial quantum rod",

abstract = "Microphotoluminescence (µ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the µ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2 meV.",

author = "G. Sek and P. Podemski and J. Misiewicz and L. Li and A. Fiore and G. Patriarche",

year = "2008",

doi = "10.1063/1.2832635",

language = "English",

volume = "92",

pages = "021901--1/3",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Photoluminescence from a single InGaAs epitaxial quantum rod

AU - Sek, G.

AU - Podemski, P.

AU - Misiewicz, J.

AU - Li, L.

AU - Fiore, A.

AU - Patriarche, G.

PY - 2008

Y1 - 2008

N2 - Microphotoluminescence (µ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the µ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2 meV.

AB - Microphotoluminescence (µ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the µ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2 meV.

U2 - 10.1063/1.2832635

DO - 10.1063/1.2832635

M3 - Article

SN - 0003-6951

VL - 92

SP - 021901-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021901

ER -

Photoluminescence from a single InGaAs epitaxial quantum rod

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