Photoluminescence characterization of Er-implanted Al2O3 films

G.N. Hoven, van den, E. Snoeks, A. Polman, J.W.M. Uffelen, van, Y.S. Oei, M.K. Smit

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Al2O3 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at. %. The samples show relatively broad photoluminescence spectra centered at lambda = 1.533 mum, corresponding to intra-4f transitions in Er3+. At an Er peak concentration of 0.23 at. %, post-implantation thermal annealing up to 950-degrees-C increases the photoluminescence intensity by a factor 40. This is a result of defect annealing, which increases the luminescence lifetime from 1 to 7 ms, as well as an increase in the Er3+ active fraction. High Er concentrations are achieved with only moderate concentration quenching effects
Original languageEnglish
Pages (from-to)3065-3067
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 1993


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