Photoluminescence and excitation study of delta doped GaAs

J.C.M. Henning; Y.A.R.R. Kessner; P.M. Koenraad; M.R. Leijs; A.P.J. Voncken; W.C. Vleuten, van der; J.H. Wolter

doi:10.4028/www.scientific.net/MSF.65-66.73

Photoluminescence and excitation study of delta doped GaAs

J.C.M. Henning, Y.A.R.R. Kessner, P.M. Koenraad, M.R. Leijs, A.P.J. Voncken, W.C. Vleuten, van der, J.H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

10 Citations (Scopus)

Original language	English
Title of host publication	Shallow Impurities in Semiconductors IV
Editors	G. Davies
Place of Publication	Aedermannsdorf
Publisher	Trans Tech Publications
Pages	73-78
ISBN (Print)	978-0-87849-619-8
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.65-66.73 https://doi.org/10.1016/0025-5416(84)90142-3
Publication status	Published - 1991
Event	conference; 4th International Conference on Shallow Impurities in Semiconductors, 31 July-2 august 1990, London, U.K - Duration: 1 Jan 1991 → …

Publication series

Name	Materials Science Forum
Volume	65-66
ISSN (Print)	0255-5476

Conference

Conference	conference; 4th International Conference on Shallow Impurities in Semiconductors, 31 July-2 august 1990, London, U.K
Period	1/01/91 → …
Other	4th International Conference on Shallow Impurities in Semiconductors, 31 July-2 august 1990, London, U.K

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Cite this

Henning, J. C. M., Kessner, Y. A. R. R., Koenraad, P. M., Leijs, M. R., Voncken, A. P. J., Vleuten, van der, W. C., & Wolter, J. H. (1991). Photoluminescence and excitation study of delta doped GaAs. In G. Davies (Ed.), Shallow Impurities in Semiconductors IV (pp. 73-78). (Materials Science Forum; Vol. 65-66). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/MSF.65-66.73, https://doi.org/10.1016/0025-5416(84)90142-3

@inproceedings{515f38c96dda4a1ea9dedf6a6fbf8cd2,

title = "Photoluminescence and excitation study of delta doped GaAs",

author = "J.C.M. Henning and Y.A.R.R. Kessner and P.M. Koenraad and M.R. Leijs and A.P.J. Voncken and {Vleuten, van der}, W.C. and J.H. Wolter",

year = "1991",

doi = "10.4028/www.scientific.net/MSF.65-66.73",

language = "English",

isbn = "978-0-87849-619-8",

series = "Materials Science Forum",

publisher = "Trans Tech Publications",

pages = "73--78",

editor = "G. Davies",

booktitle = "Shallow Impurities in Semiconductors IV",

address = "Germany",

note = "conference; 4th International Conference on Shallow Impurities in Semiconductors, 31 July-2 august 1990, London, U.K ; Conference date: 01-01-1991",

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Henning, JCM, Kessner, YARR, Koenraad, PM, Leijs, MR, Voncken, APJ, Vleuten, van der, WC & Wolter, JH 1991, Photoluminescence and excitation study of delta doped GaAs. in G Davies (ed.), Shallow Impurities in Semiconductors IV. Materials Science Forum, vol. 65-66, Trans Tech Publications, Aedermannsdorf, pp. 73-78, conference; 4th International Conference on Shallow Impurities in Semiconductors, 31 July-2 august 1990, London, U.K, 1/01/91. https://doi.org/10.4028/www.scientific.net/MSF.65-66.73, https://doi.org/10.1016/0025-5416(84)90142-3

Photoluminescence and excitation study of delta doped GaAs. / Henning, J.C.M.; Kessner, Y.A.R.R.; Koenraad, P.M.; Leijs, M.R.; Voncken, A.P.J.; Vleuten, van der, W.C.; Wolter, J.H.

Shallow Impurities in Semiconductors IV. ed. / G. Davies. Aedermannsdorf : Trans Tech Publications, 1991. p. 73-78 (Materials Science Forum; Vol. 65-66).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Photoluminescence and excitation study of delta doped GaAs

AU - Henning, J.C.M.

AU - Kessner, Y.A.R.R.

AU - Koenraad, P.M.

AU - Leijs, M.R.

AU - Voncken, A.P.J.

AU - Vleuten, van der, W.C.

AU - Wolter, J.H.

PY - 1991

Y1 - 1991

U2 - 10.4028/www.scientific.net/MSF.65-66.73

DO - 10.4028/www.scientific.net/MSF.65-66.73

M3 - Conference contribution

SN - 978-0-87849-619-8

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BT - Shallow Impurities in Semiconductors IV

A2 - Davies, G.

PB - Trans Tech Publications

CY - Aedermannsdorf

T2 - conference; 4th International Conference on Shallow Impurities in Semiconductors, 31 July-2 august 1990, London, U.K

Y2 - 1 January 1991

ER -

Henning JCM, Kessner YARR, Koenraad PM, Leijs MR, Voncken APJ, Vleuten, van der WC et al. Photoluminescence and excitation study of delta doped GaAs. In Davies G, editor, Shallow Impurities in Semiconductors IV. Aedermannsdorf: Trans Tech Publications. 1991. p. 73-78. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.65-66.73, https://doi.org/10.1016/0025-5416(84)90142-3