Photoelectrochemistry of silicon-delta-doped GaAs structures

A. R.J. Kucernak; R. Peat; D.E. Williams; P. M. Koenraad; M. Leys; J. H. Wolter

doi:10.1016/0013-4686(94)80074-X

Photoelectrochemistry of silicon-delta-doped GaAs structures

A. R.J. Kucernak, R. Peat, D.E. Williams, P. M. Koenraad, M. Leys, J. H. Wolter

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

Delta doping with silicon has been used to form a contact of metallic conductivity buried 1 μm below the surface of a GaAs MBE-grown structure. The electrochemistry of the high-purity GaAs above the contact could then be investigated. The interfaces in the structure were located by photoelectrochemical etching; the spatial distribution of defects and also some information concerning their origin within the grown layers was obtained by photoelectrochemical imaging.

Original language	English
Pages (from-to)	355-361
Number of pages	7
Journal	Electrochimica Acta
Volume	39
Issue number	3
DOIs	https://doi.org/10.1016/0013-4686(94)80074-X
Publication status	Published - 1 Jan 1994

Keywords

imaging
microscopy
molecular beam epitaxy.
photoelectrochemistry
semiconductors

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title = "Photoelectrochemistry of silicon-delta-doped GaAs structures",

abstract = "Delta doping with silicon has been used to form a contact of metallic conductivity buried 1 μm below the surface of a GaAs MBE-grown structure. The electrochemistry of the high-purity GaAs above the contact could then be investigated. The interfaces in the structure were located by photoelectrochemical etching; the spatial distribution of defects and also some information concerning their origin within the grown layers was obtained by photoelectrochemical imaging.",

keywords = "imaging, microscopy, molecular beam epitaxy., photoelectrochemistry, semiconductors",

author = "Kucernak, {A. R.J.} and R. Peat and D.E. Williams and Koenraad, {P. M.} and M. Leys and Wolter, {J. H.}",

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AU - Kucernak, A. R.J.

AU - Peat, R.

AU - Williams, D.E.

AU - Koenraad, P. M.

AU - Leys, M.

AU - Wolter, J. H.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Delta doping with silicon has been used to form a contact of metallic conductivity buried 1 μm below the surface of a GaAs MBE-grown structure. The electrochemistry of the high-purity GaAs above the contact could then be investigated. The interfaces in the structure were located by photoelectrochemical etching; the spatial distribution of defects and also some information concerning their origin within the grown layers was obtained by photoelectrochemical imaging.

AB - Delta doping with silicon has been used to form a contact of metallic conductivity buried 1 μm below the surface of a GaAs MBE-grown structure. The electrochemistry of the high-purity GaAs above the contact could then be investigated. The interfaces in the structure were located by photoelectrochemical etching; the spatial distribution of defects and also some information concerning their origin within the grown layers was obtained by photoelectrochemical imaging.

KW - imaging

KW - microscopy

KW - molecular beam epitaxy.

KW - photoelectrochemistry

KW - semiconductors

UR - http://www.scopus.com/inward/record.url?scp=0028375737&partnerID=8YFLogxK

U2 - 10.1016/0013-4686(94)80074-X

DO - 10.1016/0013-4686(94)80074-X

M3 - Article

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VL - 39

SP - 355

EP - 361

JO - Electrochimica Acta

JF - Electrochimica Acta

IS - 3

ER -

Photoelectrochemistry of silicon-delta-doped GaAs structures

Abstract

Keywords

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