Photoelectrochemistry of silicon-delta-doped GaAs structures

A. R.J. Kucernak, R. Peat, D.E. Williams, P. M. Koenraad, M. Leys, J. H. Wolter

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1 Citation (Scopus)


Delta doping with silicon has been used to form a contact of metallic conductivity buried 1 μm below the surface of a GaAs MBE-grown structure. The electrochemistry of the high-purity GaAs above the contact could then be investigated. The interfaces in the structure were located by photoelectrochemical etching; the spatial distribution of defects and also some information concerning their origin within the grown layers was obtained by photoelectrochemical imaging.

Original languageEnglish
Pages (from-to)355-361
Number of pages7
JournalElectrochimica Acta
Issue number3
Publication statusPublished - 1 Jan 1994


  • imaging
  • microscopy
  • molecular beam epitaxy.
  • photoelectrochemistry
  • semiconductors


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