Photoconductance in magnetic tunnel junctions

P.H.P. Koller; F. W.M. Vanhelmont; R. Coehoorn; W.J.M. de Jonge

doi:10.1109/INTMAG.2002.1001028

Photoconductance in magnetic tunnel junctions

P.H.P. Koller
, F. W.M. Vanhelmont
, R. Coehoorn
, W.J.M. de Jonge

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The applicability of magnetic tunnel junctions strongly depends on the electrical properties of the oxide barrier. The height and thickness of the energy barrier determines the resistance-area product of the junction, which is an important factor in the application of microstructured devices, such as MRAM. Previously the barrier height has been determined in an indirect way, namely by fitting the Simmons (1963) or Brinkman (1970) equation to the current-voltage characteristics of the junction. We have used a photoconductance set-up with which the transport properties across the insulating layer can be investigated. For the first time this technique has been applied to magnetic tunnel junctions, so that the potential step at the barrier/electrode interfaces can be determined in a direct way.

Original language	English
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Editors	J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001028
Publication status	Published - 1 Jan 2002
Event	2002 IEEE International Magnetics Conference, INTERMAG 2002 - Amsterdam, Netherlands Duration: 28 Apr 2002 → 2 May 2002

Conference

Conference	2002 IEEE International Magnetics Conference, INTERMAG 2002
Country/Territory	Netherlands
City	Amsterdam
Period	28/04/02 → 2/05/02

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10.1109/INTMAG.2002.1001028

Cite this

Koller, P. H. P., Vanhelmont, F. W. M., Coehoorn, R., & de Jonge, W. J. M. (2002). Photoconductance in magnetic tunnel junctions. In J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, J. De Boeck, & R. Wood (Eds.), INTERMAG Europe 2002 - IEEE International Magnetics Conference Article 1001028 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/INTMAG.2002.1001028

Koller, P.H.P. ; Vanhelmont, F. W.M. ; Coehoorn, R. et al. / Photoconductance in magnetic tunnel junctions. INTERMAG Europe 2002 - IEEE International Magnetics Conference. editor / J. Fidler ; B. Hillebrands ; C. Ross ; D. Weller ; L. Folks ; E. Hill ; M. Vazquez Villalabeitia ; J. A. Bain ; Jo De Boeck ; R. Wood. Piscataway : Institute of Electrical and Electronics Engineers, 2002.

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title = "Photoconductance in magnetic tunnel junctions",

abstract = "The applicability of magnetic tunnel junctions strongly depends on the electrical properties of the oxide barrier. The height and thickness of the energy barrier determines the resistance-area product of the junction, which is an important factor in the application of microstructured devices, such as MRAM. Previously the barrier height has been determined in an indirect way, namely by fitting the Simmons (1963) or Brinkman (1970) equation to the current-voltage characteristics of the junction. We have used a photoconductance set-up with which the transport properties across the insulating layer can be investigated. For the first time this technique has been applied to magnetic tunnel junctions, so that the potential step at the barrier/electrode interfaces can be determined in a direct way.",

author = "P.H.P. Koller and Vanhelmont, \{F. W.M.\} and R. Coehoorn and \{de Jonge\}, W.J.M.",

year = "2002",

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doi = "10.1109/INTMAG.2002.1001028",

language = "English",

editor = "J. Fidler and B. Hillebrands and C. Ross and D. Weller and L. Folks and E. Hill and \{Vazquez Villalabeitia\}, M. and Bain, \{J. A.\} and \{De Boeck\}, Jo and R. Wood",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "2002 IEEE International Magnetics Conference, INTERMAG 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

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Koller, PHP, Vanhelmont, FWM, Coehoorn, R & de Jonge, WJM 2002, Photoconductance in magnetic tunnel junctions. in J Fidler, B Hillebrands, C Ross, D Weller, L Folks, E Hill, M Vazquez Villalabeitia, JA Bain, J De Boeck & R Wood (eds), INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001028, Institute of Electrical and Electronics Engineers, Piscataway, 2002 IEEE International Magnetics Conference, INTERMAG 2002, Amsterdam, Netherlands, 28/04/02. https://doi.org/10.1109/INTMAG.2002.1001028

Photoconductance in magnetic tunnel junctions. / Koller, P.H.P.; Vanhelmont, F. W.M.; Coehoorn, R. et al.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. ed. / J. Fidler; B. Hillebrands; C. Ross; D. Weller; L. Folks; E. Hill; M. Vazquez Villalabeitia; J. A. Bain; Jo De Boeck; R. Wood. Piscataway: Institute of Electrical and Electronics Engineers, 2002. 1001028.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - The applicability of magnetic tunnel junctions strongly depends on the electrical properties of the oxide barrier. The height and thickness of the energy barrier determines the resistance-area product of the junction, which is an important factor in the application of microstructured devices, such as MRAM. Previously the barrier height has been determined in an indirect way, namely by fitting the Simmons (1963) or Brinkman (1970) equation to the current-voltage characteristics of the junction. We have used a photoconductance set-up with which the transport properties across the insulating layer can be investigated. For the first time this technique has been applied to magnetic tunnel junctions, so that the potential step at the barrier/electrode interfaces can be determined in a direct way.

AB - The applicability of magnetic tunnel junctions strongly depends on the electrical properties of the oxide barrier. The height and thickness of the energy barrier determines the resistance-area product of the junction, which is an important factor in the application of microstructured devices, such as MRAM. Previously the barrier height has been determined in an indirect way, namely by fitting the Simmons (1963) or Brinkman (1970) equation to the current-voltage characteristics of the junction. We have used a photoconductance set-up with which the transport properties across the insulating layer can be investigated. For the first time this technique has been applied to magnetic tunnel junctions, so that the potential step at the barrier/electrode interfaces can be determined in a direct way.

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Koller PHP, Vanhelmont FWM, Coehoorn R, de Jonge WJM. Photoconductance in magnetic tunnel junctions. In Fidler J, Hillebrands B, Ross C, Weller D, Folks L, Hill E, Vazquez Villalabeitia M, Bain JA, De Boeck J, Wood R, editors, INTERMAG Europe 2002 - IEEE International Magnetics Conference. Piscataway: Institute of Electrical and Electronics Engineers. 2002. 1001028 doi: 10.1109/INTMAG.2002.1001028

Photoconductance in magnetic tunnel junctions

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