Photoconductance in magnetic tunnel junctions

P.H.P. Koller, F. W.M. Vanhelmont, R. Coehoorn, W.J.M. de Jonge

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The applicability of magnetic tunnel junctions strongly depends on the electrical properties of the oxide barrier. The height and thickness of the energy barrier determines the resistance-area product of the junction, which is an important factor in the application of microstructured devices, such as MRAM. Previously the barrier height has been determined in an indirect way, namely by fitting the Simmons (1963) or Brinkman (1970) equation to the current-voltage characteristics of the junction. We have used a photoconductance set-up with which the transport properties across the insulating layer can be investigated. For the first time this technique has been applied to magnetic tunnel junctions, so that the potential step at the barrier/electrode interfaces can be determined in a direct way.

Original languageEnglish
Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
EditorsJ. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Electronic)0780373650, 9780780373655
DOIs
Publication statusPublished - 1 Jan 2002
Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
Duration: 28 Apr 20022 May 2002

Conference

Conference2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
CountryNetherlands
CityAmsterdam
Period28/04/022/05/02

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