Photoconductance in magnetic tunnel junctions

P.H.P. Koller, F.W.M. Vanhelmont, R. Coehoorn, W.J.M. de Jonge

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
26 Downloads (Pure)

Abstract

The photoconductance of magnetic tunnel junctions has been studied in order to obtain directly determined values of the tunnel barrier height. Experiments for different types of junctions show that the presence of an aluminum layer close to the oxide barrier is crucial for the observation of a large photocurrent. For Ni80Fe20-based magnetic tunnel junctions, the effective barrier height increases with increasing magnetic layer thickness between the aluminum source layer and the aluminum oxide barrier. This trend is also visible in the barrier height determined from a Simmons fit to the current-voltage characteristics.
Original languageEnglish
Article number1042327
Pages (from-to)2712-2714
JournalIEEE Transactions on Magnetics
Volume38
Issue number5
DOIs
Publication statusPublished - 2002

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