Periodic nanowire structures

Erik P A M Bakkers; Rienk Algra; Moira Hocevar; Magnus T. Borgstrom; George Immink; Bas Ketelaars; Lou Fe Feiner; Willem J.P. van Enckevort; Elias Vlieg; Marcel A. Verheijen

doi:10.1109/COMMAD.2010.5699764

Periodic nanowire structures

Erik P A M Bakkers, Rienk Algra, Moira Hocevar, Magnus T. Borgstrom, George Immink, Bas Ketelaars, Lou Fe Feiner, Willem J.P. van Enckevort, Elias Vlieg, Marcel A. Verheijen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the length direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	33-34
Number of pages	2
ISBN (Print)	9781424473328
DOIs	https://doi.org/10.1109/COMMAD.2010.5699764
Publication status	Published - 1 Dec 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) - Canberra, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010)
Abbreviated title	COMMAD 2010
Country/Territory	Australia
City	Canberra
Period	12/12/10 → 15/12/10
Other	Conference on Optoelectronic and Microelectronic Materials and Devices 2010

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10.1109/COMMAD.2010.5699764

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Bakkers, E. P. A. M., Algra, R., Hocevar, M., Borgstrom, M. T., Immink, G., Ketelaars, B., Feiner, L. F., van Enckevort, W. J. P., Vlieg, E., & Verheijen, M. A. (2010). Periodic nanowire structures. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 33-34). Article 5699764 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2010.5699764

@inproceedings{68676a26fe8e4b2282ecddcfb9632843,

title = "Periodic nanowire structures",

abstract = "We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the length direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires.",

author = "Bakkers, {Erik P A M} and Rienk Algra and Moira Hocevar and Borgstrom, {Magnus T.} and George Immink and Bas Ketelaars and Feiner, {Lou Fe} and {van Enckevort}, {Willem J.P.} and Elias Vlieg and Verheijen, {Marcel A.}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/COMMAD.2010.5699764",

language = "English",

isbn = "9781424473328",

pages = "33--34",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Bakkers, EPAM, Algra, R, Hocevar, M, Borgstrom, MT, Immink, G, Ketelaars, B, Feiner, LF, van Enckevort, WJP, Vlieg, E & Verheijen, MA 2010, Periodic nanowire structures. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699764, Institute of Electrical and Electronics Engineers, Piscataway, pp. 33-34, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), Canberra, Australian Capital Territory, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699764

Periodic nanowire structures. / Bakkers, Erik P A M; Algra, Rienk; Hocevar, Moira et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. Piscataway: Institute of Electrical and Electronics Engineers, 2010. p. 33-34 5699764.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Periodic nanowire structures

AU - Bakkers, Erik P A M

AU - Algra, Rienk

AU - Hocevar, Moira

AU - Borgstrom, Magnus T.

AU - Immink, George

AU - Ketelaars, Bas

AU - Feiner, Lou Fe

AU - van Enckevort, Willem J.P.

AU - Vlieg, Elias

AU - Verheijen, Marcel A.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the length direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires.

AB - We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the length direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires.

UR - http://www.scopus.com/inward/record.url?scp=79951734618&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2010.5699764

DO - 10.1109/COMMAD.2010.5699764

M3 - Conference contribution

AN - SCOPUS:79951734618

SN - 9781424473328

SP - 33

EP - 34

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010)

Y2 - 12 December 2010 through 15 December 2010

ER -

Periodic nanowire structures

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