Abstract
Focused ion beams are indispensable tools in the semiconductor industry because of their ability to image and modify structures at the nanometer length scale. Here, we report on performance predictions of a new type of focused ion beam based on photo-ionization of a laser cooled and compressed atomic beam. Particle tracing simulations are performed to investigate the effects of disorder-induced heating after ionization in a large electric field. They lead to a constraint on this electric field strength which is used as input for an analytical model which predicts the minimum attainable spot size as a function of, amongst others, the flux density of the atomic beam, the temperature of this beam, and the total current. At low currents (I¿
| Original language | English |
|---|---|
| Article number | 244301 |
| Pages (from-to) | 244301-1/9 |
| Number of pages | 9 |
| Journal | Journal of Applied Physics |
| Volume | 116 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 28 Dec 2014 |