Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies

Alhassan Aljarosha; Piyush Kaul; Bart Smolders; M.K. Matters-Kammerer; Rob Maaskant

doi:10.1109/APUSNCURSINRSM.2019.8888834

Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies

Alhassan Aljarosha
, Piyush Kaul
, Bart Smolders
, M.K. Matters-Kammerer
, Rob Maaskant

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.

Original language	English
Title of host publication	2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1081-1082
Number of pages	2
ISBN (Electronic)	978-1-7281-0692-2
DOIs	https://doi.org/10.1109/APUSNCURSINRSM.2019.8888834
Publication status	Published - 31 Oct 2019
Event	2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019 - Atlanta, United States Duration: 7 Jul 2019 → 12 Jul 2019 https://www.2019apsursi.org/

Conference

Conference	2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019
Abbreviated title	APSURSI 2019
Country/Territory	United States
City	Atlanta
Period	7/07/19 → 12/07/19
Internet address	https://www.2019apsursi.org/

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10.1109/APUSNCURSINRSM.2019.8888834

Cite this

Aljarosha, A., Kaul, P., Smolders, B., Matters-Kammerer, M. K., & Maaskant, R. (2019). Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. In 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings (pp. 1081-1082). Article 8888834 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/APUSNCURSINRSM.2019.8888834

Aljarosha, Alhassan ; Kaul, Piyush ; Smolders, Bart et al. / Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings. Piscataway : Institute of Electrical and Electronics Engineers, 2019. pp. 1081-1082

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title = "Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies",

abstract = "This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.",

author = "Alhassan Aljarosha and Piyush Kaul and Bart Smolders and M.K. Matters-Kammerer and Rob Maaskant",

year = "2019",

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publisher = "Institute of Electrical and Electronics Engineers",

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note = "2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019, APSURSI 2019 ; Conference date: 07-07-2019 Through 12-07-2019",

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}

Aljarosha, A, Kaul, P , Smolders, B , Matters-Kammerer, MK & Maaskant, R 2019, Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. in 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings., 8888834, Institute of Electrical and Electronics Engineers, Piscataway, pp. 1081-1082, 2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019, Atlanta, Georgia, United States, 7/07/19. https://doi.org/10.1109/APUSNCURSINRSM.2019.8888834

Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. / Aljarosha, Alhassan; Kaul, Piyush ; Smolders, Bart et al.
2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings. Piscataway: Institute of Electrical and Electronics Engineers, 2019. p. 1081-1082 8888834.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Aljarosha, Alhassan

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AU - Matters-Kammerer, M.K.

AU - Maaskant, Rob

PY - 2019/10/31

Y1 - 2019/10/31

N2 - This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.

AB - This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.

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DO - 10.1109/APUSNCURSINRSM.2019.8888834

M3 - Conference contribution

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BT - 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings

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Aljarosha A, Kaul P , Smolders B , Matters-Kammerer MK, Maaskant R. Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. In 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings. Piscataway: Institute of Electrical and Electronics Engineers. 2019. p. 1081-1082. 8888834 doi: 10.1109/APUSNCURSINRSM.2019.8888834

Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies

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