Passively modelocked 15, 20 and 40 Ghz bulk InGaAsP lasers

Y. Barbarin, E.A.J.M. Bente, M.J.R. Heck, Y.S. Oei, R. Nötzel, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking in 20 GHz self colliding pulse modelocked lasers and 40 GHz colliding pulse lasers has been demonstrated and the devices have been characterized. Pulse lengths down to 1.6 ps have been observed from a linear device at 20GHz. 15GHz modelocked ring lasers have been fabricated as well. In order to avoid internal reflections in the ring, the design employs successfully adiabatic bends and a directional coupler. Measurements with a 50GHz RF analyzer showed more stable operation than the linear devices, but pulses are highly chirped. The layer stack used for these lasers is compatible with our active-passive integration scheme.
Original languageEnglish
Title of host publicationProceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium
EditorsP. Mégret, M. Wuilpart, S. Bette, N. Staquet
Place of PublicationMons
PublisherIEEE/LEOS
Pages249-252
ISBN (Print)2-960022645
Publication statusPublished - 2005
Event10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, Belgium
Duration: 1 Dec 20052 Dec 2005

Conference

Conference10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium
CountryBelgium
CityMons
Period1/12/052/12/05

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