Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime

M.J.R. Heck, A. Renault, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, K.S.E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Abstract. Passive mode-locking in two section InAs/InP (100) quantum dot lasers emitting around 1.53 ¿m is observed over a large operating regime. For absorber voltages of 0 V down to -3 V and for amplifier currents of 750 mA up to 1 A the fundamental RF-peak is over 40 dB above the noise floor.
Original languageEnglish
Title of host publicationProceedings of the 14th European Conference on Integrated Optics, ECIO08, June 11-13, Eindhoven, The Netherlands
EditorsX.J.M. Leijtens
Place of PublicationEindhoven, Netherlands
PublisherTechnische Universiteit Eindhoven
Pages59-62
ISBN (Print)978-90-386-1317-8
Publication statusPublished - 2008
Event14th European Conference on Integrated Optics (ECIO 2008) - Eindhoven, Netherlands
Duration: 11 Jun 200813 Jun 2008
Conference number: 14

Conference

Conference14th European Conference on Integrated Optics (ECIO 2008)
Abbreviated titleECIO 2008
CountryNetherlands
CityEindhoven
Period11/06/0813/06/08
Other

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    Heck, M. J. R., Renault, A., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., Eikema, K. S. E., Ubachs, W., Anantathanasarn, S., & Nötzel, R. (2008). Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime. In X. J. M. Leijtens (Ed.), Proceedings of the 14th European Conference on Integrated Optics, ECIO08, June 11-13, Eindhoven, The Netherlands (pp. 59-62). [WeC4] Technische Universiteit Eindhoven.