Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

K. van Gasse, Z. Wang, V. Moskalenko, S. Latkowski, B. Kuyken, E.A.J.M. Bente, Gunther Roelkens

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Abstract

We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.
Original languageEnglish
Title of host publication2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-2
Number of pages2
ISBN (Electronic)978-4-8855-2306-9
ISBN (Print)978-1-5090-2451-3
Publication statusPublished - 5 Dec 2016
Event25th IEEE International Semiconductor Laser Conference (ISLC 2016) - Kobe, Japan
Duration: 12 Sep 201615 Sep 2016
Conference number: 25
http://islc2016.org/

Conference

Conference25th IEEE International Semiconductor Laser Conference (ISLC 2016)
Abbreviated titleISLC 2016
CountryJapan
CityKobe
Period12/09/1615/09/16
Internet address

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    van Gasse, K., Wang, Z., Moskalenko, V., Latkowski, S., Kuyken, B., Bente, E. A. J. M., & Roelkens, G. (2016). Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. In 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan (pp. 1-2). [ThB6] Institute of Electrical and Electronics Engineers. http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7765711