Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

K. van Gasse; Z. Wang; V. Moskalenko; S. Latkowski; B. Kuyken; E.A.J.M. Bente; Gunther Roelkens

Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

K. van Gasse, Z. Wang, V. Moskalenko, S. Latkowski, B. Kuyken, E.A.J.M. Bente, Gunther Roelkens

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.

Original language	English
Title of host publication	2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-2
Number of pages	2
ISBN (Electronic)	978-4-8855-2306-9
ISBN (Print)	978-1-5090-2451-3
Publication status	Published - 5 Dec 2016
Event	25th IEEE International Semiconductor Laser Conference (ISLC 2016) - Kobe, Japan Duration: 12 Sep 2016 → 15 Sep 2016 Conference number: 25 http://islc2016.org/

Conference

Conference	25th IEEE International Semiconductor Laser Conference (ISLC 2016)
Abbreviated title	ISLC 2016
Country	Japan
City	Kobe
Period	12/09/16 → 15/09/16
Internet address	http://islc2016.org/

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van Gasse, K., Wang, Z., Moskalenko, V., Latkowski, S., Kuyken, B., Bente, E. A. J. M., & Roelkens, G. (2016). Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. In 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan (pp. 1-2). [ThB6] Institute of Electrical and Electronics Engineers. http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7765711

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title = "Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate",

abstract = "We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.",

author = "{van Gasse}, K. and Z. Wang and V. Moskalenko and S. Latkowski and B. Kuyken and E.A.J.M. Bente and Gunther Roelkens",

year = "2016",

month = dec,

day = "5",

language = "English",

isbn = "978-1-5090-2451-3 ",

pages = "1--2",

booktitle = "2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "25th IEEE International Semiconductor Laser Conference (ISLC 2016) , ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",

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van Gasse, K, Wang, Z, Moskalenko, V, Latkowski, S, Kuyken, B, Bente, EAJM & Roelkens, G 2016, Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. in 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan., ThB6, Institute of Electrical and Electronics Engineers, Piscataway, pp. 1-2, 25th IEEE International Semiconductor Laser Conference (ISLC 2016) , Kobe, Japan, 12/09/16. <http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7765711>

Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. / van Gasse, K.; Wang, Z.; Moskalenko, V.; Latkowski, S.; Kuyken, B.; Bente, E.A.J.M.; Roelkens, Gunther.

2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan. Piscataway : Institute of Electrical and Electronics Engineers, 2016. p. 1-2 ThB6.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

AU - van Gasse, K.

AU - Wang, Z.

AU - Moskalenko, V.

AU - Latkowski, S.

AU - Kuyken, B.

AU - Bente, E.A.J.M.

AU - Roelkens, Gunther

N1 - Conference code: 25

PY - 2016/12/5

Y1 - 2016/12/5

N2 - We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.

AB - We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.

M3 - Conference contribution

SN - 978-1-5090-2451-3

SP - 1

EP - 2

BT - 2016 International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 25th IEEE International Semiconductor Laser Conference (ISLC 2016)

Y2 - 12 September 2016 through 15 September 2016

ER -