Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

M. Tassaert; H.J.S. Dorren; G. Roelkens; O. Raz

doi:10.1364/OE.20.011383

Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

M. Tassaert, H.J.S. Dorren, G. Roelkens, O. Raz

Research output: Contribution to journal › Article › Academic › peer-review

13 Citations (Scopus)

115 Downloads (Pure)

Abstract

Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is proposed

Original language	English
Pages (from-to)	11383-11388
Number of pages	6
Journal	Optics Express
Volume	20
Issue number	10
DOIs	https://doi.org/10.1364/OE.20.011383
Publication status	Published - 2012

Access to Document

10.1364/OE.20.011383

901063055247191Final published version, 1.38 MB

Cite this

@article{4beb7eed06d6473a836cb4ab93224066,

title = "Passive InP regenerator integrated on SOI for the support of broadband silicon modulators",

abstract = "Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is proposed",

author = "M. Tassaert and H.J.S. Dorren and G. Roelkens and O. Raz",

year = "2012",

doi = "10.1364/OE.20.011383",

language = "English",

volume = "20",

pages = "11383--11388",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "10",

}

TY - JOUR

T1 - Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

AU - Tassaert, M.

AU - Dorren, H.J.S.

AU - Roelkens, G.

AU - Raz, O.

PY - 2012

Y1 - 2012

N2 - Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is proposed

AB - Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is proposed

U2 - 10.1364/OE.20.011383

DO - 10.1364/OE.20.011383

M3 - Article

C2 - 22565758

SN - 1094-4087

VL - 20

SP - 11383

EP - 11388

JO - Optics Express

JF - Optics Express

IS - 10

ER -

Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

Abstract

Access to Document

Fingerprint

Cite this