TY - JOUR
T1 - Passive and heterogeneous integration towards a Si-based System-in-Package concept
AU - Roozeboom, F.
AU - Kemmeren, A.L.A.M.
AU - Verhoeven, J.F.C.
AU - Heuvel, van den, F.C.
AU - Klootwijk, J.H.
AU - Kretschman, H.
AU - Fric, T.
AU - Grunsven, van, E.C.E.
AU - Bardy, S.
AU - Bunel, C.
AU - Chevrie, D.
AU - LeCornec, F.
AU - Ledain, S.
AU - Murray, F.
AU - Philippe, P.
PY - 2006
Y1 - 2006
N2 - Recently Philips launched their first highly integrated cellular RF-transceiver systems using a new Si-based System-in-Package (SiP) technology. This technology utilizes back-end processing to integrate passive components onto a Si-substrate that serves as a platform for heterogeneous integration with active dies, MEMS dies, etc. As an example, a transceiver IC is flip-chip mounted onto this passive component substrate, thus minimizing interconnect parasitics and footprint area. Next, this sub-assembly is flipped back into a standard single IC-sized lead frame package. This paper reports on such Si-based SiP transceiver modules and the underlying technologies. Here, the passive die is made by the so-called PICS (Passive Integration Connecting Substrate) technology that integrates passive components on one die, such as high-Q inductors, resistors, accurate MIM capacitors and, in particular, high-density (~20-30 nF/mm/sup 2/) MOS `trench' capacitors for decoupling. These MOS capacitors integrated in RF power amplifiers showed superior signal stability compared to discrete ceramic capacitors. Ultralow-loss factors were measured: series inductance ESL
AB - Recently Philips launched their first highly integrated cellular RF-transceiver systems using a new Si-based System-in-Package (SiP) technology. This technology utilizes back-end processing to integrate passive components onto a Si-substrate that serves as a platform for heterogeneous integration with active dies, MEMS dies, etc. As an example, a transceiver IC is flip-chip mounted onto this passive component substrate, thus minimizing interconnect parasitics and footprint area. Next, this sub-assembly is flipped back into a standard single IC-sized lead frame package. This paper reports on such Si-based SiP transceiver modules and the underlying technologies. Here, the passive die is made by the so-called PICS (Passive Integration Connecting Substrate) technology that integrates passive components on one die, such as high-Q inductors, resistors, accurate MIM capacitors and, in particular, high-density (~20-30 nF/mm/sup 2/) MOS `trench' capacitors for decoupling. These MOS capacitors integrated in RF power amplifiers showed superior signal stability compared to discrete ceramic capacitors. Ultralow-loss factors were measured: series inductance ESL
U2 - 10.1016/j.tsf.2005.09.103
DO - 10.1016/j.tsf.2005.09.103
M3 - Article
VL - 504
SP - 391
EP - 396
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -