Passivation of n+-type Si surfaces by low temperature processed SiO2/Al2O3 stack

S. Bordihn, G. Dingemans, V. Mertens, J.W. Müller, W.M.M. Kessels

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)
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Abstract

The surface passivation of SiO2/Al 2O3 stacks prepared at low process temperatures was investigated on phosphorous diffused n+-type Si surfaces with a broad range of sheet resistances. Two kinds of SiO2 films were prepared, the first with plasma-enhanced chemical vapor deposition (PECVD) and the second in a wet chemical process. After atomic layer deposition of the Al2O3 capping layer, the resulting SiO2/Al2O3 stacks differ in the polarity of their fixed charge density, i.e., the PECVD SiO2 stacks had a positive and the wet chemically grown SiO2 stacks a negative fixed charge density. The PECVD SiO2/Al2O3 stacks resulted in a high surface passivation over a broad range of sheet resistances whereas the wet chemically grown SiO2 stacks were only feasible for diffused surfaces with low sheet resistances (
Original languageEnglish
Pages (from-to)925-929
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume3
Issue number3
DOIs
Publication statusPublished - 2013

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