TY - JOUR
T1 - Passivating contacts for crystalline silicon solar cells
T2 - from concepts and materials to prospects
AU - Melskens, J.
AU - van de Loo, B.W.H.
AU - Macco, B.
AU - Black, L.E.
AU - Smit, S.
AU - Kessels, W.M.M.
PY - 2018/3/1
Y1 - 2018/3/1
N2 - To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Realizing such passivating contacts in c-Si solar cells has become an important research objective, and an overview and classification of work to date on this topic is presented here. Using this overview, we discuss the design guidelines for passivating contacts and outline their prospects.
AB - To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Realizing such passivating contacts in c-Si solar cells has become an important research objective, and an overview and classification of work to date on this topic is presented here. Using this overview, we discuss the design guidelines for passivating contacts and outline their prospects.
KW - Charge carrier lifetime
KW - contacts
KW - crystalline silicon (c-Si)
KW - passivation
KW - photovoltaic (PV) cells
UR - http://www.scopus.com/inward/record.url?scp=85042114997&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2018.2797106
DO - 10.1109/JPHOTOV.2018.2797106
M3 - Article
AN - SCOPUS:85042114997
VL - 8
SP - 373
EP - 388
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
IS - 2
ER -
