Abstract
To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Realizing such passivating contacts in c-Si solar cells has become an important research objective, and an overview and classification of work to date on this topic is presented here. Using this overview, we discuss the design guidelines for passivating contacts and outline their prospects.
| Original language | English |
|---|---|
| Pages (from-to) | 373-388 |
| Number of pages | 16 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 8 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Mar 2018 |
Keywords
- Charge carrier lifetime
- contacts
- crystalline silicon (c-Si)
- passivation
- photovoltaic (PV) cells
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Melskens, J., van de Loo, B. W. H., Macco, B., Black, L. E., Smit, S., & Kessels, W. M. M. (2018). Passivating contacts for crystalline silicon solar cells: from concepts and materials to prospects. IEEE Journal of Photovoltaics, 8(2), 373-388. https://doi.org/10.1109/JPHOTOV.2018.2797106