Particle contamination control by application of plasma

Job Beckers, Boy van Minderhout, Paul P.M. Blom, Gerrit M.W. Kroesen, Ton Peijnenburg

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

13 Citations (Scopus)
226 Downloads (Pure)


With the introduction of Extreme Ultraviolet (EUV) lithography, the control of contamination has become crucial. Sources for contamination in EUV lithography scanners are not limited to only particle generation and release inside the scanner environment but may be introduced from outside as well, e.g. through translational and/or rotational (robotic) feedthroughs.
In this contribution we highlight our joint (TU/e and VDL ETG) research efforts aimed at the development of plasma-enabled contamination control strategies. The focus in this research is on airborne particles immersed in a low pressure gas flow that interact with both the afterglow of a plasma and an externally applied electric field.
A flexible experimental setup has been developed and will be introduced which is able to study the interaction between contaminants, plasmas and externally applied electric fields. Our results show that the designed configuration allows to carefully control the residual charges of the particles as well as their positions and trajectories with respect to the gas flow in which they are immersed. These results, together with the understanding of the underlying principle processes, open-up various possibilities to achieve improved cleanliness of the mentioned systems.
Original languageEnglish
Title of host publicationExtreme Ultraviolet (EUV) Lithography XI
EditorsNelson M. Felix, Anna Lio
Number of pages6
ISBN (Electronic)9781510634138
Publication statusPublished - 23 Mar 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


  • Contamination
  • Contamination control
  • EUV
  • EUV lithography
  • Particles
  • Plasma


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