To make a direct electrically pumped photonic crystal membrane laser is a challenging task. One of the problems is how to avoid short circuiting between the p- and n-doped parts of the laser diode, when the membrane thickness is limited to 200-300nm.In COBRA, we want to use the oxide of AlInAs to realize the current blocking Junction. In this way, together with a subinicron selective area re-growth technique, we expect to make electrically injected Photonic crystal lasers with higher pumping efficiency and small threshold currents, as well as low power consumption. In this paper results are presented on the development of oxidation of AlInAs. The results show that it is practically feasible to use oxide of AlInAs for current blocking in a photonic crystal laser in a InP-based membrane system.
|Title of host publication||Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands|
|Editors||J. Pozo, M. Mortensen, P. Urbach, X. Leijtens, M. Yousefi|
|Place of Publication||Delft|
|Publication status||Published - 2010|
Zhang, R., Tol, van der, J. J. G. M., Ambrosius, H. P. M. M., Thijs, P. J. A., Smalbrugge, B., Vries, de, T., Roelkens, G., Bordas, F., & Smit, M. K. (2010). Oxidation of AlInAs for current blocking in a photonic crystal laser. In J. Pozo, M. Mortensen, P. Urbach, X. Leijtens, & M. Yousefi (Eds.), Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands (pp. 237-240). TNO.