Oxidation of AlInAs for current blocking in a photonic crystal laser

R. Zhang; J.J.G.M. Tol, van der; H.P.M.M. Ambrosius; P.J.A. Thijs; B. Smalbrugge; T. Vries, de; G. Roelkens; F. Bordas; M.K. Smit

Oxidation of AlInAs for current blocking in a photonic crystal laser

R. Zhang, J.J.G.M. Tol, van der, H.P.M.M. Ambrosius, P.J.A. Thijs, B. Smalbrugge, T. Vries, de, G. Roelkens, F. Bordas, M.K. Smit

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

150 Downloads (Pure)

Abstract

To make a direct electrically pumped photonic crystal membrane laser is a challenging task. One of the problems is how to avoid short circuiting between the p- and n-doped parts of the laser diode, when the membrane thickness is limited to 200-300nm.In COBRA, we want to use the oxide of AlInAs to realize the current blocking Junction. In this way, together with a subinicron selective area re-growth technique, we expect to make electrically injected Photonic crystal lasers with higher pumping efficiency and small threshold currents, as well as low power consumption. In this paper results are presented on the development of oxidation of AlInAs. The results show that it is practically feasible to use oxide of AlInAs for current blocking in a photonic crystal laser in a InP-based membrane system.

Original language	English
Title of host publication	Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands
Editors	J. Pozo, M. Mortensen, P. Urbach, X. Leijtens, M. Yousefi
Place of Publication	Delft
Publisher	TNO
Pages	237-240
ISBN (Print)	978-90-78314-15-8
Publication status	Published - 2010

Access to Document

Metis244785Final published version, 946 KB

Cite this

Zhang, R., Tol, van der, J. J. G. M., Ambrosius, H. P. M. M., Thijs, P. J. A., Smalbrugge, B., Vries, de, T., Roelkens, G., Bordas, F., & Smit, M. K. (2010). Oxidation of AlInAs for current blocking in a photonic crystal laser. In J. Pozo, M. Mortensen, P. Urbach, X. Leijtens, & M. Yousefi (Eds.), Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands (pp. 237-240). TNO.

@inproceedings{ff16eab55a1d4185af86bca2854f0b16,

title = "Oxidation of AlInAs for current blocking in a photonic crystal laser",

abstract = "To make a direct electrically pumped photonic crystal membrane laser is a challenging task. One of the problems is how to avoid short circuiting between the p- and n-doped parts of the laser diode, when the membrane thickness is limited to 200-300nm.In COBRA, we want to use the oxide of AlInAs to realize the current blocking Junction. In this way, together with a subinicron selective area re-growth technique, we expect to make electrically injected Photonic crystal lasers with higher pumping efficiency and small threshold currents, as well as low power consumption. In this paper results are presented on the development of oxidation of AlInAs. The results show that it is practically feasible to use oxide of AlInAs for current blocking in a photonic crystal laser in a InP-based membrane system.",

author = "R. Zhang and {Tol, van der}, J.J.G.M. and H.P.M.M. Ambrosius and P.J.A. Thijs and B. Smalbrugge and {Vries, de}, T. and G. Roelkens and F. Bordas and M.K. Smit",

year = "2010",

language = "English",

isbn = "978-90-78314-15-8",

pages = "237--240",

editor = "J. Pozo and M. Mortensen and P. Urbach and X. Leijtens and M. Yousefi",

booktitle = "Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands",

publisher = "TNO",

}

Zhang, R, Tol, van der, JJGM , Ambrosius, HPMM, Thijs, PJA, Smalbrugge, B, Vries, de, T, Roelkens, G, Bordas, F & Smit, MK 2010, Oxidation of AlInAs for current blocking in a photonic crystal laser. in J Pozo, M Mortensen, P Urbach, X Leijtens & M Yousefi (eds), Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands. TNO, Delft, pp. 237-240.

Oxidation of AlInAs for current blocking in a photonic crystal laser. / Zhang, R.; Tol, van der, J.J.G.M.; Ambrosius, H.P.M.M. et al.
Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands. ed. / J. Pozo; M. Mortensen; P. Urbach; X. Leijtens; M. Yousefi. Delft: TNO, 2010. p. 237-240.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Oxidation of AlInAs for current blocking in a photonic crystal laser

AU - Zhang, R.

AU - Tol, van der, J.J.G.M.

AU - Ambrosius, H.P.M.M.

AU - Thijs, P.J.A.

AU - Smalbrugge, B.

AU - Vries, de, T.

AU - Roelkens, G.

AU - Bordas, F.

AU - Smit, M.K.

PY - 2010

Y1 - 2010

N2 - To make a direct electrically pumped photonic crystal membrane laser is a challenging task. One of the problems is how to avoid short circuiting between the p- and n-doped parts of the laser diode, when the membrane thickness is limited to 200-300nm.In COBRA, we want to use the oxide of AlInAs to realize the current blocking Junction. In this way, together with a subinicron selective area re-growth technique, we expect to make electrically injected Photonic crystal lasers with higher pumping efficiency and small threshold currents, as well as low power consumption. In this paper results are presented on the development of oxidation of AlInAs. The results show that it is practically feasible to use oxide of AlInAs for current blocking in a photonic crystal laser in a InP-based membrane system.

AB - To make a direct electrically pumped photonic crystal membrane laser is a challenging task. One of the problems is how to avoid short circuiting between the p- and n-doped parts of the laser diode, when the membrane thickness is limited to 200-300nm.In COBRA, we want to use the oxide of AlInAs to realize the current blocking Junction. In this way, together with a subinicron selective area re-growth technique, we expect to make electrically injected Photonic crystal lasers with higher pumping efficiency and small threshold currents, as well as low power consumption. In this paper results are presented on the development of oxidation of AlInAs. The results show that it is practically feasible to use oxide of AlInAs for current blocking in a photonic crystal laser in a InP-based membrane system.

M3 - Conference contribution

SN - 978-90-78314-15-8

SP - 237

EP - 240

BT - Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands

A2 - Pozo, J.

A2 - Mortensen, M.

A2 - Urbach, P.

A2 - Leijtens, X.

A2 - Yousefi, M.

PB - TNO

CY - Delft

ER -

Zhang R, Tol, van der JJGM , Ambrosius HPMM, Thijs PJA, Smalbrugge B, Vries, de T et al. Oxidation of AlInAs for current blocking in a photonic crystal laser. In Pozo J, Mortensen M, Urbach P, Leijtens X, Yousefi M, editors, Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands. Delft: TNO. 2010. p. 237-240

Oxidation of AlInAs for current blocking in a photonic crystal laser

Abstract

Access to Document

Fingerprint

Cite this