Ostwald ripening of {113} defects precursors and transient enhanced diffusion

Giovanni Mannino; Nicholas E.B. Cowern; Peter A. Stolk; Fred Roozeboom; Hendrik G.A. Huizing; Jurgen G.M. Van Berkum; Wiebe B. De Boer; Filadelfo Cristiano; Alain Claverie; Martin Jaraiz

Ostwald ripening of {113} defects precursors and transient enhanced diffusion

Giovanni Mannino, Nicholas E.B. Cowern, Peter A. Stolk, Fred Roozeboom, Hendrik G.A. Huizing, Jurgen G.M. Van Berkum, Wiebe B. De Boer, Filadelfo Cristiano, Alain Claverie, Martin Jaraiz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

The ripening of ion-beam generated point defects into extended defects has been investigated in detail. The interstitial supersaturation has been extracted from boron marker-layer diffusion after annealing under non-equilibrium defect conditions. We measured a very high initial supersaturation followed by a decrease over many orders of magnitude with a characteristic `plateau' related to the presence of {113} defects. A continuum inverse model has been used to properly describe the ripening of point defects into clusters and their evolution in the presence of a remote sink, e.g. the surface. It evidences that a nonconservative Ostwald ripening process takes place inside the defect band during the annealing and sustains the interstitial supersaturation. The model reveals moreover an oscillatory behaviour of dissociation energies of the nanometer-sized defects which are responsible for the initial high supersaturation. These defects are believed to be {113} precursors.

Original language	English
Title of host publication	1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	163-168
Number of pages	6
Publication status	Published - 1 Jan 1999
Externally published	Yes
Event	1999 MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 5 Apr 1999 → 9 Apr 1999 https://www.mrs.org/spring1999

Publication series

Name	Materials Research Society Symposium - Proceedings
Volume	568
ISSN (Print)	0272-9172

Conference

Conference	1999 MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	5/04/99 → 9/04/99
Internet address	https://www.mrs.org/spring1999

Cite this

Mannino, G., Cowern, N. E. B., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Van Berkum, J. G. M., De Boer, W. B., Cristiano, F., Claverie, A., & Jaraiz, M. (1999). Ostwald ripening of {113} defects precursors and transient enhanced diffusion. In 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing (pp. 163-168). (Materials Research Society Symposium - Proceedings; Vol. 568). Materials Research Society.

Mannino, Giovanni ; Cowern, Nicholas E.B. ; Stolk, Peter A. et al. / Ostwald ripening of {113} defects precursors and transient enhanced diffusion. 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing. Warrendale : Materials Research Society, 1999. pp. 163-168 (Materials Research Society Symposium - Proceedings).

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title = "Ostwald ripening of {113} defects precursors and transient enhanced diffusion",

abstract = "The ripening of ion-beam generated point defects into extended defects has been investigated in detail. The interstitial supersaturation has been extracted from boron marker-layer diffusion after annealing under non-equilibrium defect conditions. We measured a very high initial supersaturation followed by a decrease over many orders of magnitude with a characteristic `plateau' related to the presence of {113} defects. A continuum inverse model has been used to properly describe the ripening of point defects into clusters and their evolution in the presence of a remote sink, e.g. the surface. It evidences that a nonconservative Ostwald ripening process takes place inside the defect band during the annealing and sustains the interstitial supersaturation. The model reveals moreover an oscillatory behaviour of dissociation energies of the nanometer-sized defects which are responsible for the initial high supersaturation. These defects are believed to be {113} precursors.",

author = "Giovanni Mannino and Cowern, {Nicholas E.B.} and Stolk, {Peter A.} and Fred Roozeboom and Huizing, {Hendrik G.A.} and {Van Berkum}, {Jurgen G.M.} and {De Boer}, {Wiebe B.} and Filadelfo Cristiano and Alain Claverie and Martin Jaraiz",

year = "1999",

month = jan,

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publisher = "Materials Research Society",

pages = "163--168",

booktitle = "1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing",

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note = "1999 MRS Spring Meeting & Exhibit ; Conference date: 05-04-1999 Through 09-04-1999",

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Mannino, G, Cowern, NEB, Stolk, PA, Roozeboom, F, Huizing, HGA, Van Berkum, JGM, De Boer, WB, Cristiano, F, Claverie, A & Jaraiz, M 1999, Ostwald ripening of {113} defects precursors and transient enhanced diffusion. in 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing. Materials Research Society Symposium - Proceedings, vol. 568, Materials Research Society, Warrendale, pp. 163-168, 1999 MRS Spring Meeting & Exhibit, San Francisco, California, United States, 5/04/99.

Ostwald ripening of {113} defects precursors and transient enhanced diffusion. / Mannino, Giovanni; Cowern, Nicholas E.B.; Stolk, Peter A. et al.

1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing. Warrendale : Materials Research Society, 1999. p. 163-168 (Materials Research Society Symposium - Proceedings; Vol. 568).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Roozeboom, Fred

AU - Huizing, Hendrik G.A.

AU - Van Berkum, Jurgen G.M.

AU - De Boer, Wiebe B.

AU - Cristiano, Filadelfo

AU - Claverie, Alain

AU - Jaraiz, Martin

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AB - The ripening of ion-beam generated point defects into extended defects has been investigated in detail. The interstitial supersaturation has been extracted from boron marker-layer diffusion after annealing under non-equilibrium defect conditions. We measured a very high initial supersaturation followed by a decrease over many orders of magnitude with a characteristic `plateau' related to the presence of {113} defects. A continuum inverse model has been used to properly describe the ripening of point defects into clusters and their evolution in the presence of a remote sink, e.g. the surface. It evidences that a nonconservative Ostwald ripening process takes place inside the defect band during the annealing and sustains the interstitial supersaturation. The model reveals moreover an oscillatory behaviour of dissociation energies of the nanometer-sized defects which are responsible for the initial high supersaturation. These defects are believed to be {113} precursors.

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M3 - Conference contribution

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PB - Materials Research Society

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Mannino G, Cowern NEB, Stolk PA, Roozeboom F, Huizing HGA, Van Berkum JGM et al. Ostwald ripening of {113} defects precursors and transient enhanced diffusion. In 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing. Warrendale: Materials Research Society. 1999. p. 163-168. (Materials Research Society Symposium - Proceedings).

Ostwald ripening of {113} defects precursors and transient enhanced diffusion

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