Ostwald ripening of {113} defects precursors and transient enhanced diffusion

Giovanni Mannino, Nicholas E.B. Cowern, Peter A. Stolk, Fred Roozeboom, Hendrik G.A. Huizing, Jurgen G.M. Van Berkum, Wiebe B. De Boer, Filadelfo Cristiano, Alain Claverie, Martin Jaraiz

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

The ripening of ion-beam generated point defects into extended defects has been investigated in detail. The interstitial supersaturation has been extracted from boron marker-layer diffusion after annealing under non-equilibrium defect conditions. We measured a very high initial supersaturation followed by a decrease over many orders of magnitude with a characteristic `plateau' related to the presence of {113} defects. A continuum inverse model has been used to properly describe the ripening of point defects into clusters and their evolution in the presence of a remote sink, e.g. the surface. It evidences that a nonconservative Ostwald ripening process takes place inside the defect band during the annealing and sustains the interstitial supersaturation. The model reveals moreover an oscillatory behaviour of dissociation energies of the nanometer-sized defects which are responsible for the initial high supersaturation. These defects are believed to be {113} precursors.

Original languageEnglish
Title of host publication1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing
Place of PublicationWarrendale
PublisherMaterials Research Society
Pages163-168
Number of pages6
Publication statusPublished - 1 Jan 1999
Externally publishedYes
Event1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, USA
Duration: 5 Apr 19997 Apr 1999

Publication series

NameMaterials Research Society Symposium - Proceedings
Volume568
ISSN (Print)0272-9172

Conference

Conference1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing'
CitySan Francisco, CA, USA
Period5/04/997/04/99

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