Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

Stephen J. Sweeney, Peter J.A. Thijs

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

Abstract

High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.

Original languageEnglish
Title of host publication2003 IEEE LEOS Annual Meeting Conference Proceedings
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages977-978
Number of pages2
ISBN (Print)0-7803-7888-1
DOIs
Publication statusPublished - 9 Dec 2003
Externally publishedYes
Event2003 IEEE LEOS Annual Meeting Conference - TUCSON, AZ, United States
Duration: 26 Oct 200330 Oct 2003

Conference

Conference2003 IEEE LEOS Annual Meeting Conference
CountryUnited States
CityTUCSON, AZ
Period26/10/0330/10/03

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