Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

Stephen J. Sweeney; Peter J.A. Thijs

doi:10.1109/LEOS.2003.1253133

Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

Stephen J. Sweeney, Peter J.A. Thijs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

15 Citations (Scopus)

Abstract

High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.

Original language	English
Title of host publication	2003 IEEE LEOS Annual Meeting Conference Proceedings
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	977-978
Number of pages	2
ISBN (Print)	0-7803-7888-1
DOIs	https://doi.org/10.1109/LEOS.2003.1253133
Publication status	Published - 9 Dec 2003
Externally published	Yes
Event	2003 IEEE LEOS Annual Meeting Conference - TUCSON, AZ, United States Duration: 26 Oct 2003 → 30 Oct 2003

Conference

Conference	2003 IEEE LEOS Annual Meeting Conference
Country/Territory	United States
City	TUCSON, AZ
Period	26/10/03 → 30/10/03

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10.1109/LEOS.2003.1253133

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title = "Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers",

abstract = "High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.",

author = "Sweeney, {Stephen J.} and Thijs, {Peter J.A.}",

year = "2003",

month = dec,

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doi = "10.1109/LEOS.2003.1253133",

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Sweeney, SJ & Thijs, PJA 2003, Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers. in 2003 IEEE LEOS Annual Meeting Conference Proceedings., 1253133, Institute of Electrical and Electronics Engineers, Piscataway, pp. 977-978, 2003 IEEE LEOS Annual Meeting Conference, TUCSON, AZ, United States, 26/10/03. https://doi.org/10.1109/LEOS.2003.1253133

Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers. / Sweeney, Stephen J.; Thijs, Peter J.A.

2003 IEEE LEOS Annual Meeting Conference Proceedings. Piscataway : Institute of Electrical and Electronics Engineers, 2003. p. 977-978 1253133.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

AU - Sweeney, Stephen J.

AU - Thijs, Peter J.A.

PY - 2003/12/9

Y1 - 2003/12/9

N2 - High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.

AB - High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.

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DO - 10.1109/LEOS.2003.1253133

M3 - Conference contribution

AN - SCOPUS:0345328266

SN - 0-7803-7888-1

SP - 977

EP - 978

BT - 2003 IEEE LEOS Annual Meeting Conference Proceedings

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2003 IEEE LEOS Annual Meeting Conference

Y2 - 26 October 2003 through 30 October 2003

ER -

Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers

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