Abstract
High temperature degradation of the efficiency of 1.5μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.
Original language | English |
---|---|
Title of host publication | 2003 IEEE LEOS Annual Meeting Conference Proceedings |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 977-978 |
Number of pages | 2 |
ISBN (Print) | 0-7803-7888-1 |
DOIs | |
Publication status | Published - 9 Dec 2003 |
Externally published | Yes |
Event | 2003 IEEE LEOS Annual Meeting Conference - TUCSON, AZ, United States Duration: 26 Oct 2003 → 30 Oct 2003 |
Conference
Conference | 2003 IEEE LEOS Annual Meeting Conference |
---|---|
Country/Territory | United States |
City | TUCSON, AZ |
Period | 26/10/03 → 30/10/03 |