Origin of room-temperature ferromagnetism in hydrogenated epitaxial graphene on silicon carbide

Mohamed Ridene, Ameneh Najafi, Kees Flipse (Corresponding author)

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Abstract

The discovery of room-temperature ferromagnetism of hydrogenated epitaxial graphene on silicon carbide challenges for a fundamental understanding of this long-range phenomenon. Carbon allotropes with their dispersive electron states at the Fermi level and a small spin-orbit coupling are not an obvious candidate for ferromagnetism. Here we show that the origin of ferromagnetism in hydrogenated epitaxial graphene with a relatively high Curie temperature (>300 K) lies in the formation of curved specific carbon site regions in the graphene layer, induced by the underlying Si-dangling bonds and by the hydrogen bonding. Hydrogen adsorption is therefore more favourable at only one sublattice site, resulting in a localized state at the Fermi energy that can be attributed to a pseudo-Landau level splitting. This n = 0 level forms a spin-polarized narrow band at the Fermi energy leading to a high Curie temperature and larger magnetic moment can be achieved due to the presence of Si dangling bonds underneath the hydrogenated graphene layer.

Original languageEnglish
Article number228
Number of pages12
JournalNanomaterials
Volume9
Issue number2
DOIs
Publication statusPublished - 6 Feb 2019

Keywords

  • Electronic structure
  • Ferromagnetism
  • Hydrogenated epitaxial graphene

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